| Records |
| Author |
Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
| Title |
Tunnel field-effect transistors for sensitive terahertz detection |
Type |
Journal Article |
| Year |
2021 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
| Volume |
12 |
Issue |
1 |
Pages |
543 |
Keywords  |
field-effect transistors, bilayer graphene, BLG |
| Abstract |
The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. |
| Address |
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu |
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English |
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2041-1723 |
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PMID:33483488; PMCID:PMC7822863 |
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1261 |
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Kuzin, A.; Kovalyuk, V.; Golikov, A.; Prokhodtsov, A.; Marakhin, A.; Ferrari, S.; Pernice, W.; Gippius, N.; Goltsman, G. |
| Title |
Efficiency of focusing grating couplers versus taper length and angle |
Type |
Conference Article |
| Year |
2019 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1410 |
Issue |
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Pages |
012181 |
| Keywords |
focusing grating coupler |
| Abstract |
Here we experimentally studied dependence of a focusing grating coupler efficiency versus taper length and angle on silicon nitride platform. As a result, we obtained a dependence for the efficiency of a focusing grating coupler on the parameters of the taper length and angle. |
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1742-6588 |
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1184 |
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Loudkov, D.; Tong, C.-Y. E.; Marrone, D. P.; Ryabchun, S.; Paine, S. N.; Blundell, R. |
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Transmission measurements of infrared filters for low-noise terahertz receiver applications |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 16th Int. Symp. Space Terahertz Technol. |
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Pages |
354-357 |
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FTS, Zitex, alkali halide, crystalline quartz, Parylene, polyethylene, IR filters, transmission, THz applications |
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Infrared (IR) filters are very important to the efficient operation of cryogenic receivers. Usually, such filters are mounted on the radiation shield of the cryostat to reduce the heat load to the 4 K stage. Insufficient filtering may cause the temperature of the mixing element in a receiver to be excessively warm, leading to degradation in sensitivity. These filters should be effective in blocking the room temperature IR radiation from outside the cryostat, yet should be transparent across the desired signal frequency band. In the Terahertz frequency range, which is close to the infrared, it is difficult to find an inexpensive low- loss material that can provide the required IR blocking capacity. We present transmission measurements, made using a Fourier Transform Spectrometer (FTS), of a number of potential infrared filters between 0.4 and 1.6 THz. The filters tested include the widely-used, Teflon-based, Zitex-A and Zitex-G films, alkali halide based infrared filter, and crystalline quartz coated with Parylene, and polyethylene films. |
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1473 |
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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
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Investigation of excited donor states in GaAs |
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Journal Article |
| Year |
1974 |
Publication |
Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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7 |
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10 |
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1248-1250 |
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GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. |
| Title |
Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations |
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Journal Article |
| Year |
2019 |
Publication |
AIP Advances |
Abbreviated Journal |
AIP Advances |
| Volume |
9 |
Issue |
10 |
Pages |
105220 |
| Keywords |
GaAs/AlGaAs superlattice, SL, NbN HEB |
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Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level. |
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2158-3226 |
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1274 |
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