| |
Records |
Links |
|
Author |
Gol’tsman, G. N.; Gershenzon, E. M. |
|
| |
Title |
High speed hot-electron superconducting bolometer |
Type |
Conference Article |
| |
Year |
1993 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
|
| |
Volume |
2104 |
Issue |
|
Pages |
181-182 |
|
| |
Keywords  |
NbN HEb, Nb, Al |
|
| |
Abstract |
Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
SPIE |
Place of Publication |
|
Editor |
Birch, J.R.; Parker, T.J. |
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
18th International Conference on Infrared and Millimeter Waves |
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1652 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. |
|
| |
Title |
Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride |
Type |
Journal Article |
| |
Year |
1997 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
|
| |
Volume |
23 |
Issue |
6 |
Pages |
486-488 |
|
| |
Keywords |
NbN KID |
|
| |
Abstract |
A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D*=1012 W−1·Hz1/2 at a temperature T=4.2 K and D*=1016 W−1·cm· Hz1/2 at T=1.6 K. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1063-7850 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1593 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
|
| |
Title |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
Type |
Journal Article |
| |
Year |
1998 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
|
| |
Volume |
73 |
Issue |
26 |
Pages |
3938-3940 |
|
| |
Keywords |
NbN SSPD, SNSPD |
|
| |
Abstract |
The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0003-6951 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1579 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. |
|
| |
Title |
Fast NbN superconducting switch controlled by optical radiation |
Type |
Journal Article |
| |
Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
|
| |
Volume |
7 |
Issue |
2 |
Pages |
3734-3737 |
|
| |
Keywords |
NbN superconducting switch |
|
| |
Abstract |
The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1051-8223 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1596 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
|
| |
Title |
Observation of free carrier resonances in p-type germanium at submillimeter wavelengths |
Type |
Journal Article |
| |
Year |
1978 |
Publication |
Sov. Phys. Solid State |
Abbreviated Journal |
Sov. Phys. Solid State |
|
| |
Volume |
20 |
Issue |
4 |
Pages |
573-579 |
|
| |
Keywords |
p-Ge, free carriers, resonances |
|
| |
Abstract |
The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1721 |
|
| Permanent link to this record |
