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Slysz, W., Wegrzecki, M., Papis, E., Gol'tsman, G. N., Verevkin, A., & Sobolewski, R. (2004). A method of optimization of the NbN superconducting single-photon detector (Vol. 36).
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Slysz, W., Wegrzecki, M., Bar, J., Grabiec, P., Gol'tsman, G. N., Verevkin, M., et al. (2004). NbN superconducting single-photon detectors coupled with a communication fiber (Vol. 37).
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Verevkin, A., Pearlman, A., Slysz, W., Zhang, J., Currie, M., Korneev, A., et al. (2004). Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications. J. Modern Opt., 51(9-10), 1447–1458.
Abstract: The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers.
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Goltsman, G., Korneev, A., Izbenko, V., Smirnov, K., Kouminov, P., Voronov, B., et al. (2004). Nano-structured superconducting single-photon detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 520(1-3), 527–529.
Abstract: NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Rubtsova, I., Korneev, A., Matvienko, V., Chulkova, G., Milostnaya, I., Goltsman, G., et al. (2004). Spectral sensitivity, quantum efficiency, and noise equivalent power of NbN superconducting single-photon detectors in the IR range. In Proc. 29th IRMMW / 12th THz (pp. 461–462).
Abstract: We have developed nanostructured NbN superconducting single-photon detectors capable of GHz-rate photon counting in the 0.4 to 5 /spl mu/m wavelength range. Quantum efficiency of 30%, dark count rate 3/spl times/10/sup -4/ s/sup -1/, and NEP=10/sup -20/ W/Hz/sup -1/2/ have been measured at the 1.3-/spl mu/m wavelength for the device operating at 2.0 K.
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Verevkin, A., Zhang, J., Pearlman, A., Slysz, W., Sobolewski, R., Korneev, A., et al. (2004). Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range.
Abstract: We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices.
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Ryabchun, S., Korneev, A., Matvienko, V., Smirnov, K., Kouminov, P., Seleznev, V., et al. (2004). Superconducting single photon detectors array based on hot electron phenomena. In Proc. 15th Int. Symp. Space Terahertz Technol. (pp. 242–247).
Abstract: In this paper we propose to use time domain multiplexing for large format arrays of superconducting single photon detectors (SSPDs) of the terahertz, visible and infrared frequency ranges based on ultrathin superconducting NbN films. Effective realization of time domain multiplexing for SSPD arrays is possible due to a short electric pulse of the SSPD as response to radiation quantum absorption, picosecond jitter and extremely low noise equivalent power (NEP). We present experimental results of testing 2×2 arrays in the infrared waveband. The measured noise equivalent power in the infrared and expected for the terahertz waveband is 10 – 21 WHz -1/2 . The best quantum efficiency (QE) of SSPD is 50% at 1.3 µm wavelength.
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Hajenius, M., Baselmans, J. J. A., Gao, J. R., Klapwijk, T. M., de Korte 2, P. A. J., Voronov, B., et al. (2004). Increased bandwidth of NbN phonon cooled hot electron bolometer mixers. In Proc. 15th Int. Symp. Space Terahertz Technol. (pp. 381–386).
Abstract: We study experimentally the IF gain bandwidth of NbN phonon-cooled hot-electron-bolometer (HEB) mixers for a set of devices with different contact structures but an identical NbN film. We observe that the IF bandwidth depends strongly on the exact contact structure and find an IF gain bandwidth of 6 GHz for a device with an additional superconducting layer (NbTiN) in between the active NbN film and the gold contact to the antenna. These results contradict the common opinion that the IF bandwidth is determined by the phonon-escape time between the NbN film and the substrate. Hence we calculate the IF gain bandwidth of a superconducting film using a two-temperature model. We find that the bandwidth increases strongly with operating temperature and is not limited by the phonon escape time. This is because of strong temperature dependence of the phonon specific heat in the NbN film.
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Cherednichenko, S., Khosropanah, P., Berg, T., Merkel, H., Kollberg, E., Drakinskiy, V., et al. (2004). Optimization of HEB mixer for the Herschel Space Observatory. In Proc. 15th Int. Symp. Space Terahertz Technol. (16).
Abstract: A mixer development for the HIFI instrument of the Herschel Space Observatory has come to the final stage. In our paper and conference presentation we will describe the most important details of the Band 6 Low and High Mixer Unit design. Special attention will be given to the optimization of the hot- electron bolometer mixer chip, which is based on 3.5nm NbN superconducting film on silicon. As the HEB’s local oscillator power requirements depend on the bolometer size, we have compared mixer noise temperature for different bolometer width- to- length ratio. A trade- off between mixer performance and local oscillator power requirements results in the mixer units equipped with optimized mixer chips, providing the largest coverage of the Band6 RF band with the lowest possible receiver noise. A short account of the beam pattern measurements of Band6 mixers will be given as well.
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Gao, J. R., Hajenius, M., Baselmans, J. J. A., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2004). NbN hot electron bolometer mixers with superior performance for space applications. In E. Armandillo, & B. Leone (Eds.), Proc. Int. workshop on low temp. electronics (pp. 11–17). Noordwijk.
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