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Semenov, A. D., & Gol'tsman, G. N. (1999). Non-thermal response of a diffusion-cooled hot-electron bolometer. IEEE Trans. Appl. Supercond., 9(2), 4491–4494.
Abstract: We present an analysis of a diffusion-cooled hot-electron bolometer in the limiting case of a weak thermalization of non-equilibrium quasiparticles. We propose a new model relying on the non-thermal suppression of the superconducting energy gap by excess quasiparticles. Using material parameters typical for Al, we evaluate performance of the bolometer in the heterodyne regime at terahertz frequencies. Estimates show that the mixer may have quantum limited noise temperature and a few tens of GHz bandwidth, while the required local oscillator power is in the /spl mu/W range due to in-effective suppression of the energy gap by quasiparticles with high energies.
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Gershenzon, E. M., Gol'tsman, G. N., Gogidze, I. G., Gusev, Y. P., Elantiev, A. I., Karasik, B. S., et al. (1990). Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state. Sov. Supercond., 3(10), 1582–1597.
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Gershenzon, E. M., & Gol'tsman, G. N. (1993). Hot electron superconductive mixers. In Proc. 4th Int. Symp. Space Terahertz Technol. (pp. 618–622).
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Vachtomin, Y. B., Antipov, S. V., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., Kaurova, N. S., et al. (2004). Noise temperature measurements of NbN phonon-cooled hot electron bolometer mixer at 2.5 and 3.8 THz. In Proc. 15th Int. Symp. Space Terahertz Technol. (pp. 236–241). Northampton, Massachusetts, USA.
Abstract: We present the results of noise temperature measurements of NbN phonon-cooled HEB mixers based on a 3.5 nm NbN film deposited on a high-resistivity Si substrate with a 200 nm – thick MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 µm x 0.2 µm active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. We also present the results of direct detection contribution to the measured Y-factor and of a possible error of noise temperature calculation. This error was more than 8% for the mixer with in-plane dimensions of 2.4 x 0.16 µm 2 at the optimal noise temperature point. The use of a mesh filter enabled us to avoid the effect of direct detection and decrease optical losses by 0.5 dB. The paper is concluded by the investigation results of the mixer polarization response. It was shown that the polarization can differ from the circular one at 3.8 THz by more than 2 dB.
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Lobanov, Y., Shcherbatenko, M., Finkel, M., Maslennikov, S., Semenov, A., Voronov, B. M., et al. (2015). NbN hot-electron-bolometer mixer for operation in the near-IR frequency range. IEEE Trans. Appl. Supercond., 25(3), 2300704 (1 to 4).
Abstract: Traditionally, hot-electron-bolometer (HEB) mixers are employed for THz and “super-THz” heterodyne detection. To explore the near-IR spectral range, we propose a fiber-coupled NbN film based HEB mixer. To enhance the incident-light absorption, a quasi-antenna consisting of a set of parallel stripes of gold is used. To study the antenna effect on the mixer performance, we have experimentally studied a set of devices with different size of the Au stripe and spacing between the neighboring stripes. With use of the well-known isotherm technique we have estimated the absorption efficiency of the mixer, and the maximum efficiency has been observed for devices with the smallest pitch of the alternating NbN and NbN-Au stripes. Also, a proper alignment of the incident Eâƒ<2014>-field with respect to the stripes allows us to improve the coupling further. Studying IV-characteristics of the mixer under differently-aligned Eâƒ<2014>-field of the incident radiation, we have noticed a difference in their shape. This observation suggests that a difference exists in the way the two waves with orthogonal polarizations parallel and perpendicular Eâƒ<2014>-field to the stripes heat the electrons in the HEB mixer. The latter results in a variation in the electron temperature distribution over the HEB device irradiated by the two waves.
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Ryabchun, S. A., Tretyakov, I. V., Pentin, I. V., Kaurova, N. S., Seleznev, V. A., Voronov, B. M., et al. (2009). Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys. Quant. Electron., 52(8), 576–582.
Abstract: We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
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Semenov, A. D., Hübers, H. - W., Schubert, J., Gol'tsman, G. N., Elantiev, A. I., Voronov, B. M., et al. (2000). Design and performance of the lattice-cooled hot-electron terahertz mixer. J. Appl. Phys., 88(11), 6758–6767.
Abstract: We present the measurements and the theoreticalmodel of the frequency-dependent noise temperature of a superconductor lattice-cooled hot-electron bolometer mixer in the terahertz frequency range. The increase of the noise temperature with frequency is a cumulative effect of the nonuniform distribution of the high-frequency current in the bolometer and the charge imbalance, which occurs at the edges of the normal domain and at the contacts with normal metal. We show that under optimal operation the fluctuation sensitivity of the mixer is determined by thermodynamic fluctuations of the noise power, whereas at small biases there appears additional noise, which is probably due to the flux flow. We propose the prescription of how to minimize the influence of the current distribution on the mixer performance.
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Lobanov, Y. V., Tong, C. - Y. E., Hedden, A. S., Blundell, R., & Gol'tsman, G. N. (2010). Microwave-assisted슠measurement슠of the슠frequency슠response슠of슠terahertz슠HEB슠mixers슠with a슠fourier슠transform슠spectrometer. In 21st International Symposium on Space Terahertz Technology (pp. 420–423).
Abstract: We describe a novel method of operation of the HEB direct detector for use with a Fourier Transform Spectrometer. Instead of elevating the bath temperature, we have measured the RF response of waveguide HEB mixers by applying microwave radiation to select appropriate bias conditions. In our experiment, a microwave signal is injected into the HEB mixer via its IF port. By choosing an appropriate injection level, the device can be operated close to the desired operating point. Furthermore, we have shown that both thermal biasing and microwave injection can reproduce the same spectral response of the HEB mixer. However, with the use of microwave injection, there is no need to wait for the mixer to reach thermal equilibrium, so characterisation can be done in less time. Also, the liquid helium consumption for our wet cryostat is also reduced. We have demonstrated that the signalto-noise ratio of the FTS measurements can be improved with microwave injection.
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Gershenzon, E. M., Gol'tsman, G. N., Elantiev, A. I., Karasik, B. S., & Potoskuev, S. E. (1988). Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state. Sov. J. Low Temp. Phys., 14(7), 414–420.
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Gol'tsman, G. N., Elant'iev, A. I., Karasik, B. S., & Gershenzon, E. M. (1993). Antenna – coupled superconducting electron-heating bolometer. In Proc. 4th Int. Symp. Space Terahertz Technol. (pp. 623–628).
Abstract: We propose a novel antenna-coupled superconducting bolometer based on electron-heating in the resistive state. A short narrow ultrathin super- conducting film strip (sized approximately 4x1x0.01 pm 3 ), which is in good thermal contact with the thermostat, serves as a resistive load for infrared or submillimeter current. In contrast to conventional isothermal super- conducting bolometers electron-heating ones can have a higher sensitivity which grows when filni. thickness is reduced. Response time of electron- heating bolometer does not depend on heat transfer from the film to the enviroment. To calculate the sensitivity (NEP), we have used experimental data on wideband Al, Nb and NbN bolometers which have the same un- derlying physical mechanism. The bolom.eters have been made in the form of a structure composed of a number of long narrow strips. The values of for Al, NEP have been found to be 1.5 . 113 -16 1 140 -15 ) and 2 . 10 – 14werT,-1/2 – Nb and NbN respectively. In the paper, the prospects are also discussed of improving the picosecond YBaCuO detector, developed recently. NEP value of the detector, if combined with a microantenna, can reach the order of 10- •ilz-v2.
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1982). Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state. JETP Lett., 36(7), 296–299.
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Gol'tsman, G. N., Gusinskii, E. N., Malyavkin, A. V., Ptitsina, N. G., Selevko, A. G., & Edel'shtein, V. M. (1987). The excitonic Zeeman effect in uniaxially-strained germanium. Sov. Phys. JETP, 65(6), 1233–1241.
Abstract: We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium.
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Gershenzon, E. M., Gol'tsman, G. N., Ptitsina, N. G., & Riger, E. R. (1986). Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium. Sov. Phys. JETP, 64(4), 889–897.
Abstract: Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
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Gershenzon, E. M., Gol'tsman, G. N., & Mel'nikov, A. P. (1971). Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett., 14(5), 185–186.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1979). Population and lifetime of excited states of shallow impurities in Ge. Sov. Phys. JETP, 49(2), 355–362.
Abstract: An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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