Records |
Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
Title |
Transitions of electrons between excited states of donors in germanium |
Type |
Journal Article |
Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
14 |
Issue |
2 |
Pages |
63-65 |
Keywords |
Ge, donors, excited states |
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1740 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Title |
Investigation of population and ionization of donor excited states in Ge |
Type |
Conference Article |
Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
Volume |
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Pages |
631-634 |
Keywords |
Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Author |
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
Type |
Journal Article |
Year |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume |
6 |
Issue |
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Pages |
362-363 |
Keywords |
Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Author |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
Type |
Journal Article |
Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume |
10 |
Issue |
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Pages |
1379-1383 |
Keywords |
Ge, cyclotron resonance, charged impurities, |
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1772 |
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Author |
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
Type |
Journal Article |
Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
40 |
Issue |
2 |
Pages |
311-315 |
Keywords |
Ge, cyclotron resonance |
Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Title |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
Type |
Journal Article |
Year |
1989 |
Publication |
Sov. Phys. and Technics of Semiconductors |
Abbreviated Journal |
Sov. Phys. and Technics of Semiconductors |
Volume |
23 |
Issue |
8 |
Pages |
843-846 |
Keywords |
Ge, crystallography |
Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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Serial |
1692 |
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Author |
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
Title |
Germanium hot-electron narrow-band detector |
Type |
Journal Article |
Year |
1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
Volume |
16 |
Issue |
8 |
Pages |
1346 |
Keywords |
Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Author |
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Title |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
Type |
Journal Article |
Year |
1997 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume |
56 |
Issue |
16 |
Pages |
10089-10096 |
Keywords |
disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
Abstract |
The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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0163-1829 |
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1766 |
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Author |
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Title |
Electron–phonon interaction in disordered conductors |
Type |
Journal Article |
Year |
1999 |
Publication |
Phys. Rev. B Condens. Matter |
Abbreviated Journal |
Phys. Rev. B Condens. Matter |
Volume |
263-264 |
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190-192 |
Keywords |
disordered conductors, electron-phonon interaction |
Abstract |
The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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0921-4526 |
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1765 |
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