| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
| Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
1989 |
Sov. Phys. and Technics of Semiconductors |
23 |
843-846 |
| Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. |
Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves |
1986 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
50 |
280-281 |
| Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
Germanium hot-electron narrow-band detector |
1971 |
Sov. Radio Engineering And Electronic Physics |
16 |
1346 |
| Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. |
Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations |
2019 |
AIP Advances |
9 |
105220 |
| Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
| Kuzin, A.; Kovalyuk, V.; Golikov, A.; Prokhodtsov, A.; Marakhin, A.; Ferrari, S.; Pernice, W.; Gippius, N.; Goltsman, G. |
Efficiency of focusing grating couplers versus taper length and angle |
2019 |
J. Phys.: Conf. Ser. |
1410 |
012181 |
| Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
Tunnel field-effect transistors for sensitive terahertz detection |
2021 |
Nat. Commun. |
12 |
543 |
| Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
2018 |
J. Phys.: Conf. Ser. |
1124 |
051054 |
| Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
2018 |
J. Phys.: Conf. Ser. |
1124 |
051050 (1 to 5) |
| Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
Response of carbon nanotube film transistor to the THz radiation |
2018 |
EPJ Web Conf. |
195 |
05012 (1 to 2) |
| Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. |
Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder |
2019 |
Phys. Rev. Applied |
12 |
054001 |
| Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. |
Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it |
1978 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
42 |
1142-1148 |
| Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
2019 |
EPJ Web Conf. |
220 |
03012 |
| Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. |
The electron-phonon relaxation time in thin superconducting titanium nitride films |
2013 |
Appl. Phys. Lett. |
103 |
252602 (1 to 4) |
