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Author Title Year Publication DOI
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. Investigation of population and ionization of donor excited states in Ge 1976 Physics of Semiconductors
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure 1989 Sov. Phys. and Technics of Semiconductors
Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves 1986 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. Germanium hot-electron narrow-band detector 1971 Sov. Radio Engineering And Electronic Physics
Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations 2019 AIP Advances 10.1063/1.5116014