Records |
Author |
Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. |
Title |
Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films |
Type |
Conference Article |
Year |
1996 |
Publication |
Czech J. Phys. |
Abbreviated Journal |
Czech J. Phys. |
Volume |
46 |
Issue |
S5 |
Pages |
2489-2490 |
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Al, Be, Nb films |
Abstract |
The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K). |
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0011-4626 |
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1767 |
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Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Title |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
Type |
Journal Article |
Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
64 |
Issue |
5 |
Pages |
404-409 |
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2DEG, AlGaAs/GaAs heterostructures |
Abstract |
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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1608 |
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Author |
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
Type |
Journal Article |
Year |
1996 |
Publication |
Surface Science |
Abbreviated Journal |
Surface Science |
Volume |
361-362 |
Issue |
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Pages |
569-573 |
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2DEG, AlGaAs/GaAs heterostructures |
Abstract |
For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed. |
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0039-6028 |
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1609 |
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Author |
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
Type |
Journal Article |
Year |
1996 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
Volume |
53 |
Issue |
12 |
Pages |
R7592-R7595 |
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2DEG, AlGaAs/GaAs heterostructures |
Abstract |
We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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1612 |
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Author |
van de Stadt, H. |
Title |
An improved 1 THz waveguide mixer |
Type |
Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Pages |
536 |
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Charlottesville, Virginia, USA |
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Probably other authors exist. |
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263 |
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Author |
Belitsky, V. Yu.; Kollberg, E. L. |
Title |
Tuning circuit for NbN SIS mixer |
Type |
Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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234 |
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Charlottesville, Virginia, USA |
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264 |
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Ellison, B. N.; Maddison, B. J.; Matheson, D. N.; Oldfield, M. L.; Marazita, S.; Crowe, T. W.; Maaskant, P.; Kelly, W. M. |
Title |
First results for a 2.5 THz Schottky diode waveguide mixer |
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Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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494 |
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Charlottesville, Virginia, USA |
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265 |
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Author |
Betz, A. L.; Borejko, R. T. |
Title |
A practical Schottky mixer for 5 THz |
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Conference Article |
Year |
1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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503 |
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269 |
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Author |
Carlstrom, John E.; Jonas Zmuidzinas |
Title |
Millimeter and Submillimeter Techniques |
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Book Chapter |
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1996 |
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848 |
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Oxford University Press Inc |
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New York |
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Review of radio science 1993–1996 |
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34 |
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Published for the International Union of Radio Science |
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268 |
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Hesler, J. L.; Hall, W. R.; Crowe, T. W.; Weikle, R. M.; Bradley, R. F.; Pan, Shing-Kuo |
Title |
Submm wavelenght waveguide mixers using planar Schottky barier diods |
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Conference Article |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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462 |
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270 |
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