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Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
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Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
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Journal Article |
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1997 |
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Phys. Rev. B |
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Phys. Rev. B |
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56 |
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16 |
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10089-10096 |
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disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
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The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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0163-1829 |
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1766 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
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Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
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Conference Article |
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1997 |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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55-58 |
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2DEG, AlGaAs/GaAs heterostructures |
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1602 |
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Tong, C. Y. E.; Chen, L.; Blundell, R. |
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Theory of distributed mixing and amplification in a superconductingquasi-particle nonlinear transmission line |
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1997 |
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IEEE Trans. Microw. Theory Techn. |
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45 |
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7 |
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1086-1092 |
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274 |
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Kerr, A. R.; Feldman, M. J.; Pan, S.-K. |
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Receiver noise temperature, the quantum noise limit, and zero–point fluctuations |
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Conference Article |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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101-111 |
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277 |
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de Lange, G.; Hu, Q.; Huang, H.; Lichtenberger, A. W. |
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Title |
Development of a 170-210 GHz 3×3 micromachined SIS imaging array |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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518 |
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278 |
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