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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Submillimeter spectroscopy of semiconductors |
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1973 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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37 |
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2 |
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299-304 |
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semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Egorov, A. Y.; Knyazev, D. A.; Andrianov, A. V.; Zakhar’in, A. O.; Konnikov, S. G.; Gol’tsman, G. N. |
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Title |
A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter |
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Journal Article |
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2012 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
100 |
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13 |
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131104 (1 to 4) |
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semiconductor superlattice |
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The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.
This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia). |
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0003-6951 |
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1379 |
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Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
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Title |
Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
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Journal Article |
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2012 |
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Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
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Volume |
57 |
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7 |
Pages |
971-974 |
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Keywords |
semiconducting superlattice frequency multiplier, NbN HEB mixers |
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We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
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1063-7842 |
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1378 |
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Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. |
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Planar Schottky diode with a Γ-shaped anode suspended bridge |
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Conference Article |
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2020 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1695 |
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Pages |
012154 |
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Keywords |
Schottky diode, GaAs, InP substrate |
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In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate. |
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1742-6588 |
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1152 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
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Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
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Conference Article |
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1997 |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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163-166 |
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S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN |
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1603 |
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Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N. |
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Title |
Optimisation of spontaneous four-wave mixing in a ring microcavity |
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Conference Article |
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2017 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
47 |
Issue |
10 |
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887-891 |
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ring microcavity |
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Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable. |
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RPLAB @ kovalyuk @ |
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1142 |
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Казаков, А. Ю.; Кардакова, А. И.; Селиверстов, С. В.; Горшков, К. Н.; Дивочий, А. В.; Финкель, М. И.; Корнеев, А. А.; Вахтомин, Ю. Б. |
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Возможность применения сверхпроводниковых материалов в качестве отражающего покрытия холодного зеркала телескопа субмиллиметрового диапазона |
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2012 |
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Совр. проб. науки и обр. |
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Совр. проб. науки и обр. |
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3 |
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1-5 |
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radio telescope, superconducting coating |
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russian |
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2070-7428 |
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УДК 520.272.2 |
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RPLAB @ sasha @ казаковвозможность |
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1030 |
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Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. |
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Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits: supplementary material |
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Miscellaneous |
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2017 |
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Optica |
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1-9 |
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Quantum detectors; Spectrometers and spectroscopic instrumentation; Nanophotonics and photonic crystals; Fluorescence correlation spectroscopy; Fluorescence resonance energy transfer; Fluorescence spectroscopy; Imaging techniques; Optical components; Quantum key distribution |
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This document provides supplementary information to “Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits", DOI:10.1364/optica.4.000557. Here we detail the on-chip spectrometer design, its characterization and the experimental setup we used. In addition, we present a detailed report concerning the characterization of the superconducting nanowire single photon detectors. In the final sections, we describe sample preparation and characterization of the nanodiamonds containing silicon vacancy color centers. |
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Osa |
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Kahl:17 |
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1218 |
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Semenov, A.; Goltsman, G.; Korneev, A. |
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Quantum detection by current carrying superconducting film |
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2001 |
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Phys. C: Supercond. |
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Phys. C: Supercond. |
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351 |
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4 |
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349-356 |
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quantum detection, phase slip centers, quasiparticle diffusion |
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We describe a novel quantum detection mechanism in the superconducting film carrying supercurrent. The mechanism incorporates growing normal domain and breaking of superconductivity by the bias current. A single photon absorbed in the film creates transient normal spot that causes redistribution of the current and, consequently, increase of the current density in superconducting areas. When the current density exceeds the critical value, the film switches into resistive state and generates the voltage pulse. Analysis shows that a submicron-wide film of conventional low temperature superconductor operated in liquid helium may detect single far-infrared photon. The amplitude and duration of the voltage pulse are in the millivolt and picosecond range, respectively. The quantitative model is presented that allows simulation of the detector utilizing this detection mechanism. |
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0921-4534 |
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507 |
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Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system |
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2017 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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132 |
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01004 (1 to 2) |
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QKD, SSPD, SNSPD |
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Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched” in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs. |
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2100-014X |
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