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Gousev, Y. P., Gol'tsman, G. N., Semenov, A. D., Gershenzon, E. M., Nebosis, R. S., Heusinger, M. A., et al. (1994). Broadband ultrafast superconducting NbN detector for electromagnetic radiation. J. Appl. Phys., 75(7), 3695–3697.
Abstract: An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect.
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Gousev, Y. P., Gol'tsman, G. N., Karasik, B. S., Gershenzon, E. M., Semenov, A. D., Barowski, H. S., et al. (1996). Quasioptical superconducting hot electron bolometer for submillmeter waves. Int. J. of Infrared and Millimeter Waves, 17(2), 317–331.
Abstract: We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated.
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Voronov, B. M., Gershenzon, E. M., Gol'tsman, G. N., Gubkina, T. O., & Semash, V. D. (1994). Superconductive properties of ultrathin NbN films on different substrates. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 7(6), 1097–1102.
Abstract: A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz.
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Gousev, Y. P., Semenov, A. D., Gol'tsman, G. N., Sergeev, A. V., & Gershenzon, E. M. (1994). Electron-phonon interaction in disordered NbN films. Phys. B Condens. Mat., 194-196, 1355–1356.
Abstract: Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
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Karasik, B. S., Il'in, K. S., Ptitsina, N. G., Gol'tsman, G. N., Gershenzon, E. M., Pechen', E. V., et al. (1998). Electron-phonon scattering rate in impure NbC films. In NASA/ADS (Y35.08).
Abstract: The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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