Author |
Title |
Year |
Publication |
DOI |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
1989 |
Sov. Phys. and Technics of Semiconductors |
|
Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. |
Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves |
1986 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
|
Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. |
Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations |
2019 |
AIP Advances |
10.1063/1.5116014 |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
|
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
2018 |
J. Phys.: Conf. Ser. |
10.1088/1742-6596/1124/5/051054 |