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Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. |
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Title |
Механизм преобразования частоты в n-InSb-смесителе |
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Journal Article |
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Year |
1991 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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25 |
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11 |
Pages |
1986-1998 |
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Keywords |
n-InSb mixer |
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Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. |
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1753 |
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Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. |
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Title |
Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла |
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Journal Article |
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Year |
1990 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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24 |
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12 |
Pages |
2145-2150 |
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Hall constant, concentration of impurities, p-Si |
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На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая. |
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1754 |
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Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. |
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Title |
Кинетические явления в компенсированном n-InSb при низких температурах |
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Journal Article |
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1990 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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24 |
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1 |
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3-24 |
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Keywords |
compensated n-InSb, impurities |
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Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb. |
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1756 |
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Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. |
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Title |
Superconductivity in highly disordered NbN nanowires |
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2016 |
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Nanotechnol. |
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Nanotechnol. |
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27 |
Issue |
47 |
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47lt02 (1 to 8) |
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NbN nanowires |
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The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. |
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National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia |
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0957-4484 |
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PMID:27782000 |
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1332 |
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Thijs de Graauw; Nick Whyborn; Frank Helmich; Pieter Dieleman; Peter Roelfsema; Emmanuel Caux; Tom Phillips; Jürgen Stutzki; Douwe Beintema; Arnold Benz; Nicolas Biver; Adwin Boogert; Francois Boulanger; Sergey Cherednichenko; Odile Coeur-Joly; Claudia Comito; Emmanuel Dartois; Albrecht de Jonge; Gert de Lange; Ian Delorme; Anna DiGiorgio; Luc Dubbeldam; Kevin Edwards; Michael Fich; Rolf Güsten; Fabrice Herpin; Netty Honingh; Robert Huisman; Herman Jacobs; Willem Jellema; Jon Kawamura; Do Kester; Teun Klapwijk; Thomas Klein; Jacob Kooi; Jean-Michel Krieg; Carsten Kramer; Bob Kruizenga; Wouter Laauwen; Bengt Larsson; Christian Leinz; Rene Liseau; Steve Lord; Willem Luinge; Anthony Marston; Harald Merkel; Rafael Moreno; Patrick Morris; Anthony Murphy; Albert Naber; Pere Planesas; Jesus Martin-Pintado; Micheal Olberg; Piotr Orleanski; Volker Ossenkopf; John Pearson; Michel Perault; Sabine Phillip; Mirek Rataj; Laurent Ravera; Paolo Saraceno; Rudolf Schieder; Frank Schmuelling; Ryszard Szczerba; Russell Shipman; David Teyssier; Charlotte Vastel; Huib Visser; Klaas Wildeman; Kees Wafelbakker; John Ward; Roonan Higgins; Henri Aarts; Xander Tielens; Peer Zaal |
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The Herschel-heterodyne instrument for the far-infrared (HIFI): instrument and pre-launch testing |
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2008 |
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Proc. SPIE |
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7010 |
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701004 |
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Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Paine, Scot.t. N.; Patt, Ferdinand; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene |
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Superconductive hot-electron bolometer mixer receiver for 800 GHz operation |
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Miscellaneous |
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2000 |
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IEEE Trans. Microwave Theory and Techniques |
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IEEE Trans. Microwave Theory and Techniques |
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48 |
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4 |
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683-689 |
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RPLAB @ s @ Kawamura_superconductivehot-electron |
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Li, Mo; Pernice, W. H. P.; Xiong, C.; Baehr-Jones, T.; Hochberg, M.; Tang, H. X. |
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Harnessing optical forces in integrated photonic circuits |
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2008 |
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Nature |
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Nature |
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456 |
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7221 |
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480-484 |
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0028-0836 |
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RPLAB @ s @ |
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Mair, U.; Suttywong, N.; Hübers, H.-W.; Semenov, A. D.; Richter, H.; Wagner, G.; Birk, M. |
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Development of 1.8 THz receiver for the TELIS instrument |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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Göteborg, Sweden |
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RPLAB @ s @ qo_TELIS_1p8_THz |
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Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. |
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Superconducting single photon detectors made by local oxidation with an atomic force microscope |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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90 |
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19 |
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191116 (1 t0 3) |
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SSPD |
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The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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0003-6951 |
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Hong, Kyushik; Marsh, P. F.; Geok-Ing Ng; Pavlidis, D.; Hong, Chang-Hee |
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Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications |
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1994 |
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IEEE Trans. Electron Devices |
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41 |
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9 |
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1489-1497 |
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