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Morozov, D. V., Smirnov, K. V., Smirnov, A. V., Lyakhov, V. A., & Goltsman, G. N. (2005). A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Semicond., 39(9), 1082–1086.
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Jiang, L., Li, J., Zhang, W., Yao, Q. J., Lin, Z. L., Shi, S. C., et al. (2005). Characterization of NbN HEB mixers cooled by a close-cycled 4 Kelvin refrigerator. IEEE Trans. Appl. Supercond., 15(2), 511–513.
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Sobolewski, R., Zhang, J., Slysz, W., Pearlman, A., Verevkin, A., Lipatov, A., et al. (2003). Ultrafast superconducting single-photon optical detectors. In J. Spigulis, J. Teteris, M. Ozolinsh, & A. Lusis (Eds.), Proc. SPIE (Vol. 5123, pp. 1–11). SPIE.
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Antipov, S. V., Svechnikov, S. I., Smirnov, K. V., Vakhtomin, Y. B., Finkel, M. I., Goltsman, G. N., et al. (2001). Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz. Physics of Vibrations, 9(4), 242–245.
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Svechnikov, S. I., Antipov, S. V., Vakhtomin, Y. B., Goltsman, G. N., Gershenzon, E. M., Cherednichenko, S. I., et al. (2001). Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers. Physics of Vibrations, 9(3), 205–210.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Goltsman, G. N., Gershenson, E. M., & Yngvesson, K. S. (1997). Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 55–58).
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Voevodin, E. I., Gershenzon, E. M., Goltsman, G. N., & Ptitsina, N. G. (1989). Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure. Sov. Phys. and Technics of Semiconductors, 23(8), 843–846.
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Gershenzon, E. M., Gershenson, M. E., Goltsman, G. N., Lyulkin, A. M., Semenov, A. D., & Sergeev, A. V. (1989). Limiting characteristics of fast-response superconducting bolometers. Zhurnal Tekhnicheskoi Fiziki, 59(2), 11–120.
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Gershenzon, Y. M., Goltsman, G. N., Yelantyev, A. I., Petrova, Y. B., Ptitsina, N. G., & Filatov, V. S. (1987). Lecture demonstrations of properties of superconductors and liquid helium. USSR Rept Phys. Math. JPRS UPM, 24(7), 51.
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Gershenzon, E. M., Goltsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1982). Kinetics of submillimeter impurity and exciton photoconduction in Ge. Optics and Spectroscopy, 52(4), 454–455.
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Blagosklonskaya, L. E., Gershenzon, E. M., Goltsman, G. N., & Elantev, A. I. (1978). Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 42, pp. 1231–1234). Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia.
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Gershenzon, E. M., Goltsman, G. N., & Orlov, L. (1976). Investigation of population and ionization of donor excited states in Ge. In Physics of Semiconductors (pp. 631–634). North-Holland Publishing Co.
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Gershenzon, E. M., Goltsman, G. N., & Ptitsyna, N. G. (1974). Investigation of excited donor states in GaAs. Sov. Phys. Semicond., 7(10), 1248–1250.
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Averkin, A. S., Shishkin, A. G., Chichkov, V. I., Voronov, B. M., Goltsman, G. N., Karpov, A., et al. (2014). Tunable frequency-selective surface based on superconducting split-ring resonators. In 8th Metamaterials.
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Baeva, E. M., Titova, N. A., Veyrat, L., Sacépé, B., Semenov, A. V., Goltsman, G. N., et al. (2021). Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates. Phys. Rev. Applied, 15(5), 054014.
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