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Author Bell, Matthew; Sergeev, Andrei; Goltsman, Gregory; Bird, Jonathan; Verevkin, Aleksandr
Title Transition-edge sensors based on superconducting nanowires Type Abstract
Year 2006 Publication Proc. APS March Meeting Abbreviated Journal Proc. APS March Meeting
Volume Issue Pages B38.00001
Keywords NbN nanowire TES
Abstract We present our experimental study of superconducting NbN nanowire-based sensor. The responsivity of the sensor is strongly affected by the superconducting transition width of the nanostructure, which, in turn, is determined by the phase slip centers (PCSs) dynamics. The fluctuations and noise properties of the sensor are also discussed, as well as the devices' behavior at high magnetic fields. The ultimate performance of the sensor and prospects of the devices will be discussed, as well.
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Call Number Serial 1455
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Author Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N.
Title Population of excited-states of small admixtures in germanium Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 42 Issue 6 Pages 1154-1159
Keywords Ge, excited states, admixtures
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Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor
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Call Number Serial 1723
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Author Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G.
Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
Year 1977 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 25 Issue 12 Pages 539-543
Keywords Ge, shallow impurities, excited states
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Call Number Serial 1726
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Author Gershenzon, E. M.; Goltsman, G. N.; Orlov, L.
Title Investigation of population and ionization of donor excited states in Ge Type Conference Article
Year 1976 Publication Physics of Semiconductors Abbreviated Journal Physics of Semiconductors
Volume Issue Pages 631-634
Keywords Ge, donor excited states
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Address Amsterdam
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Publisher North-Holland Publishing Co. Place of Publication Editor
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Call Number Serial 1732
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
Title Investigation of excited donor states in GaAs Type Journal Article
Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 7 Issue 10 Pages 1248-1250
Keywords GaAs, excited donor states
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Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor
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Notes Approved no
Call Number Serial 1733
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