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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
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Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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1975 |
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JETP Lett. |
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JETP Lett. |
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22 |
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4 |
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95-97 |
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Keywords |
Ge, impurities, excited states, absorption spectra |
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1773 |
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Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
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Journal Article |
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Year |
1972 |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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6 |
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362-363 |
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Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. |
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Title |
Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses |
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Journal Article |
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1993 |
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Opt. Lett. |
Abbreviated Journal |
Opt. Lett. |
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Volume |
18 |
Issue |
2 |
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96-97 |
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Keywords |
YBCO HTS detectors |
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We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment. |
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0146-9592 |
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PMID:19802049 |
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1660 |
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Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. |
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Title |
Superconductive properties of ultrathin NbN films on different substrates |
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1994 |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Volume |
7 |
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6 |
Pages |
1097-1102 |
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Keywords |
NbN films |
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A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. |
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Russian |
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0131-5366 |
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Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках |
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1631 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A. |
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Title |
Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation |
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Conference Article |
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1994 |
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Council on Low-temp. Phys. |
Abbreviated Journal |
Council on Low-temp. Phys. |
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82-83 |
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Keywords |
YBCO HTS HEB |
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Dubna |
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Russian |
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Joint Inst. for Nuclear Research, Dubna (Russian Federation); 296 p; 1994; p. 82-83; 30. Conference on low-temperature physics; 30. Soveshchanie po fizike nizkikh temperatur; Dubna (Russian Federation); 6-8 Sep 1994 |
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Notes |
Неравновесный и болометрический отклик YBaCuO пленок в резиотивном состоянии на инфракрасное лазерное излучение малой интенсивности |
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1632 |
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