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  Author Title Year Publication Volume Pages Links
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors 1983 Sov. Phys. Semicond. 17 908-913 details   url
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of submillimeter impurity and exciton photoconduction in Ge 1982 Optics and Spectroscopy 52 454-455 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Cross section for binding of free carriers into excitons in germanium 1981 JETP Lett. 33 574 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Population and lifetime of excited states of shallow impurities in Ge 1979 Sov. Phys. JETP 49 355-362 details   url
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. Intervalley cyclotron-impurity resonance of electrons in n-Ge 1976 JETP Lett. 24 125-128 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Investigation of free excitons in Ge and their condensation at submillimeter wavelengths 1976 Sov. Phys. JETP 43 116-122 details   url
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. Energy spectrum of free excitons in germanium 1973 JETP Lett. 18 93 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Submillimeter spectroscopy of semiconductors 1973 Sov. Phys. JETP 37 299-304 details   url
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. Electron–phonon interaction in disordered conductors 1999 Phys. Rev. B Condens. Matter 263-264 190-192 details   doi
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate 1997 Phys. Rev. B 56 10089-10096 details   doi
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