Lobanov, Y., Tong, E., Blundell, R., Hedden, A., Voronov, B., & Gol'tsman, G. (2011). Large-signal frequency response of an HEB mixer: from 300 MHz to terahertz. IEEE Trans. Appl. Supercond., 21(3), 628–631.
Abstract: We present a study of the large signal frequency response of an HEB mixer over a wide frequency range. In our experiments, we have subjected the HEB mixer to incident electromagnetic radiation from 0.3 GHz to 1 THz. The mixer element is an NbN film deposited on crystalline quartz. The mixer chip is mounted in a waveguide cavity, coupled to free space with a diagonal horn. At microwave frequencies, electromagnetic radiation is applied through the coaxial bias port of the mixer block. At higher frequencies the input signal passes via the diagonal horn feed. At each frequency, the incident power is varied and a family of I-V curves is recorded. From the curves we identify 3 distinct regimes of operation of the mixer separated by the phonon relaxation frequency and the superconducting energy gap frequency observed at about 3 GHz and 660 GHz respectively. In this paper, we will present observed curves and discuss the results of our experiment.
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Lobanov, Y. V., Tong, C. - Y. E., Hedden, A. S., Blundell, R., Voronov, B. M., & Gol'tsman, G. N. (2011). Direct measurement of the gain and noise bandwidths of HEB mixers. IEEE Trans. Appl. Supercond., 21(3), 645–648.
Abstract: The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement.
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Kawakami, A., Saito, S., & Hyodo, M. (2011). Fabrication of nano-antennas for superconducting Infrared detectors. IEEE Trans. Appl. Supercond., 21(3), 632–635.
Abstract: To improve the response performance of superconducting infrared detectors, we have developed a fabrication process for nano-antennas. A nano-antenna consists of a dipole antenna, and a superconducting thin film strip placed in the antenna's center. By measuring the transition temperature of the superconducting strips, we confirmed that their superconductivity maintained a good condition after the nano-antenna fabrication process. We also evaluated nano-antenna characteristics using Fourier transform infrared spectroscopy. The evaluated antenna length and width were respectively set at around 2400 nm and 400 nm, and the antennas were placed at intervals of several micrometers around the area of 1 mm2 . In an evaluation of spectral transmission characteristics, clear absorption caused by antenna effects was observed at around 1400 cm-1. High polarization dependencies were also observed.
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Il'in, K. S., Lindgren, M., Currie, M. A., Semenov, D., Gol'tsman, G. N., Sobolewski, R., et al. (2000). Picosecond hot-electron energy relaxation in NbN superconducting photodetectors. Appl. Phys. Lett., 76(19), 2752–2754.
Abstract: We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect.
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Semenov, A. D., Nebosis, R. S., Gousev, Y. P., Heusinger, M. A., & Renk, K. F. (1995). Analysis of the nonequilibrium photoresponse of superconducting films to pulsed radiation by use of a two-temperature model. Phys. Rev. B, 52(1), 581–590.
Abstract: Photoresponse of a superconducting film in the resistive state to pulsed radiation has been studied in the framework of a model assuming that two different effective temperatures can be assigned to the quasiparticle and phonon nonequilibrium distributions. The coupled electron-phonon-substrate system is described by a system of time-dependent energy-balance differential equations for effective temperatures. An analytical solution of the system is given and calculated voltage transients are compared with experimental photoresponse signals taking into account the radiation pulse shape and the time resolution of the readout electronics. It is supposed that a resistive state (vortices, fluxons, network of intergrain junctions, hot spots, phase slip centers) provides an ultrafast connection between electron temperature changes and changes of the film resistance and thus plays a minor role in the temporal evolution of the response. In accordance with experimental observations a two-component response was revealed from simulations. The slower component corresponds to a bolometric mechanism while the fast component is connected with the relaxation of the electron temperature. Calculated photoresponse transients are presented for different ratios of the electron and phonon specific heat, radiation pulse durations and fluences, and frequency band passes of registration electronics. From the amplitude of the bolometric component we determine the radiation energy absorbed in a film. This enables us to reveal an intrinsic electron-phonon scattering time even if it is much shorter than the time resolution of readout electronics. We analyze experimental voltage transients for NbN, YBa2Cu3O7, and TlBa2Ca2Cu3O9 superconducting films and find the electron-phonon interaction times at the transition temperatures of 17, 2.5, and 1.8 ps, respectively. The values are in reasonable agreement with data of other experiments.
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