| Records |
| Author |
Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. |
| Title |
Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer |
Type |
Journal Article |
| Year |
2012 |
Publication |
Phys. Procedia |
Abbreviated Journal |
Phys. Procedia |
| Volume |
36 |
Issue |
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Pages |
334-337 |
| Keywords |
NbN HEB mixer |
| Abstract |
We report on a 2.5 THz spiral antenna coupled NbN hot electron bolometer (HEB) mixers, fabricated with in-situ process. The receiver noise temperature with lowest value of 1180 K is in good agreement with calculated quantum efficiency factor as a function of bias voltage. In addition, the measured spectral response of the spiral antenna coupled NbN HEB mixer shows broad frequency coverage of 0.8-3 THz, and corrected response for optical losses, FTS, and coupling efficiency between antenna and bolometer falls with frequency due to diffraction-limited beam of lens/antenna combination. |
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| ISSN |
1875-3892 |
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1381 |
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| Author |
Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
| Title |
Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
Type |
Journal Article |
| Year |
2012 |
Publication |
Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
| Volume |
57 |
Issue |
7 |
Pages |
971-974 |
| Keywords |
semiconducting superlattice frequency multiplier, NbN HEB mixers |
| Abstract |
We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
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| ISSN |
1063-7842 |
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no |
| Call Number |
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Serial |
1378 |
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| Author |
Ozhegov, R. V.; Gorshkov, K. N.; Okunev, O. V.; Gol’tsman, G. N. |
| Title |
Superconducting hot-electron bolometer mixer as element of thermal imager matrix |
Type |
Journal Article |
| Year |
2010 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
| Volume |
36 |
Issue |
11 |
Pages |
1006-1008 |
| Keywords |
HEB mixers |
| Abstract |
The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz. |
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| ISSN |
1063-7850 |
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no |
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Serial |
1390 |
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| Author |
Skalare, A.; McGrath, William R.; Echternach, P. M.; Leduc, H. G.; Siddiqi, I.; Verevkin, A.; Prober, D. E. |
| Title |
Aluminum hot-electron bolometer mixers at submillimeter wavelengths |
Type |
Journal Article |
| Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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| Volume |
11 |
Issue |
1 |
Pages |
641-644 |
| Keywords |
Al HEB mixer, contacts, interface, in situ, in-situ, Aluminium HEB mixer |
| Abstract |
Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies. |
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Edition |
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| ISSN |
1051-8223 |
ISBN |
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Approved |
no |
| Call Number |
ref919426b |
Serial |
1061 |
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| Author |
Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 27th Eur. Microwave Conf. |
Abbreviated Journal |
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| Volume |
2 |
Issue |
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Pages |
972-977 |
| Keywords |
HEB mixer, fabrication process |
| Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
| Address |
Jerusalem, Israel |
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| Publisher |
IEEE |
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27th Eur. Microwave Conf. |
| Notes |
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no |
| Call Number |
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Serial |
1075 |
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