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| Author |
Gol'tsman, G. N.; Loudkov, D. N. |
| Title |
Terahertz superconducting hot-electron bolometer mixers and their application in radio astronomy |
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Journal Article |
| Year |
2003 |
Publication |
Radiophys. Quant. Electron. |
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| Volume |
46 |
Issue |
8/9 |
Pages |
604-617 |
| Keywords |
NbN HEB mixers |
| Abstract |
We review the latest developments, research, and radioastronomy applications of hot-electron bolometer (HEB) mixers operated in the terahertz waveband. The physical principles of operation of terahertz HEB mixers are presented, their manufacturing from ultrathin NbN films, the main HEB-mixer parameters and their measurement techniques are discussed, and practical terahertz radioastronomy projects based on heterodyne receivers with HEB mixers are considered. |
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0033-8443 |
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UDC 537.312.62 |
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472 |
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InSb detectors technical data sheet |
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Miscellaneous |
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2003 |
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InSb, detector |
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476 |
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Su, M. Y.; Carter, S. G.; Sherwin, M. S. |
| Title |
Strong-field terahertz optical mixing in excitons |
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Journal Article |
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2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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67 |
Issue |
12 |
Pages |
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optical mixing |
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1098-0121 |
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500 |
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Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O. |
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Generating visible single photons on demand with single InP quantum dots |
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Journal Article |
| Year |
2003 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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82 |
Issue |
10 |
Pages |
1509-1511 |
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single photon, quantum dot, InP |
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0003-6951 |
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503 |
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Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory |
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Gain bandwidth and noise temperature of NbTiN HEB mixer |
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Conference Article |
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2003 |
Publication |
Proc. 14th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 14th Int. Symp. Space Terahertz Technol. |
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276-285 |
| Keywords |
NbTiN HEB mixer |
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We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz. |
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