Baubert, J., Salez, M., Delorme, Y., Pons, P., Goltsman, G., Merkel, H., et al. (2003). Membrane-based HEB mixer for THz applications. In J. - C. Chiao, V. K. Varadan, & C. Cané (Eds.), Proc. SPIE (Vol. 5116, pp. 551–562). SPIE.
Abstract: We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si3N4/SiO2 membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly.
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Antipov, S. V., Svechnikov, S. I., Smirnov, K. V., Vakhtomin, Y. B., Finkel, M. I., Goltsman, G. N., et al. (2001). Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz. Physics of Vibrations, 9(4), 242–245.
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Svechnikov, S. I., Antipov, S. V., Vakhtomin, Y. B., Goltsman, G. N., Gershenzon, E. M., Cherednichenko, S. I., et al. (2001). Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers. Physics of Vibrations, 9(3), 205–210.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Goltsman, G. N., Gershenson, E. M., & Yngvesson, K. S. (1997). Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 55–58).
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Ekström, H., Kroug, M., Belitsky, V., Kollberg, E., Olsson, H., Goltsman, G., et al. (1996). Hot electron mixers for THz applications. In E. J. Rolfe, & G. Pilbratt (Eds.), Proc. 30th ESLAB (pp. 207–210).
Abstract: We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
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