Palma, F., Teppe, F., Fatimy, A. E., Green, R., Xu, J., Vachontin, Y., et al. (2010). THz communication system based on a THz quantum cascade laser and a hot electron bolometer. In 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves (11623798 (1 to 2)).
Abstract: We present the experimental study of the direct emission – detection system based on the THz Quantum Cascade Laser as a source and Hot Electron Bolometer (HEB) detector – in view of its application as an optical communication system. We show that the system can efficiently transmit the QCL Terahertz pulses. We estimate the maximal modulation speed of the system to be about several GHz and show that it is limited only by the QCL pulse power supply, detector amplifier and connection line/wires parameters.
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Tretyakov, I., Svyatodukh, S., Perepelitsa, A., Ryabchun, S., Kaurova, N., Shurakov, A., et al. (2020). Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector. Nanomaterials (Basel), 10(5), 1–12.
Abstract: In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
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Titova, N., Kardakova, A., Tovpeko, N., Ryabchun, S., Mandal, S., Morozov, D., et al. (2017). Superconducting diamond films as perspective material for direct THz detectors. In Proc. 28th Int. Symp. Space Terahertz Technol. (82).
Abstract: Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013.
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Ozhegov, R. V., Smirnov, A. V., Vakhtomin, Y. B., Smirnov, K. V., Divochiy, A. V., & Goltsman, G. N. (2009). Ultrafast superconducting bolometer receivers for terahertz applications. In Proc. PIERS (867). 777 Concord Avenue, Suite 207 Cambridge, MA 02138: The Electromagnetics Academy.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.
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Korneev, A., Korneeva, Y., Florya, I., Voronov, B., & Goltsman, G. (2012). NbN nanowire superconducting single-photon detector for mid-infrared. Phys. Procedia, 36, 72–76.
Abstract: Superconducting single-photon detectors (SSPD) is typically 100 nm-wide supercondiucting strip in a shape of meander made of 4-nm-thick film. To reduce response time and increase voltage response a parallel connection of the strips was proposed. Recently we demonstrated that reduction of the strip width improves the quantum effciency of such a detector at wavelengths longer than 1.5 μm. Being encourage by this progress in quantum effciency we improved the fabrication process and made parallel-wire SSPD with 40-nm-wide strips covering total area of 10 μm x 10 μm. In this paper we present the results of the characterization of such a parallel-wire SSPD at 10.6 μm wavelength and demonstrate linear dependence of the count rate on the light power as it should be in case of single-photon response.
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Goltsman, G. N., Korneev, A. A., Finkel, M. I., Divochiy, A. V., Florya, I. N., Korneeva, Y. P., et al. (2010). Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter. In 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves (p. 1).
Abstract: We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications.
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Elmanova, A., An, P., Kovalyuk, V., Golikov, A., Elmanov, I., & Goltsman, G. (2020). Study of silicon nitride O-ring resonator for gas-sensing applications. In J. Phys.: Conf. Ser. (Vol. 1695, 012124).
Abstract: In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
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Korneev, A., Divochiy, A., Marsili, F., Bitauld, D., Fiore, A., Seleznev, V., et al. (2008). Superconducting photon number resolving counter for near infrared applications. In P. Tománek, D. Senderáková, & M. Hrabovský (Eds.), Proc. SPIE (Vol. 7138, 713828 (1 to 5)). Spie.
Abstract: We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate.
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Minaeva, O., Fraine, A., Korneev, A., Divochiy, A., Goltsman, G., & Sergienko, A. (2012). High resolution optical time-domain reflectometry using superconducting single-photon detectors. In Frontiers in Opt. 2012/Laser Sci. XXVIII (Fw3a.39). Optical Society of America.
Abstract: We discuss the advantages and limitations of single-photon optical time-domain reflectometry with superconducting single-photon detectors. The higher two-point resolution can be achieved due to superior timing performance of SSPDs in comparison with InGaAs APDs.
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Korneev, A. A., Divochiy, A. V., Vakhtomin, Y. B., Korneeva, Y. P., Larionov, P. A., Manova, N. N., et al. (2013). IR single-photon receiver based on ultrathin NbN superconducting film. Rus. J. Radio Electron., (5).
Abstract: We present our recent results in research and development of superconducting single-photon detector (SSPD). We achieved the following performance improvement: first, we developed and characterized SSPD integrated in optical cavity and enabling its illumination from the face side, not through the substrate, second, we improved the quantum efficiency of the SSPD at around 3 μm wavelength by reduction of the strip width to 40 nm, and, finally, we improved the detection efficiency of the SSPD-based single-photon receiver system up to 20% at 1550 nm and extended its wavelength range beyond 1800 nm by the usage of the fluoride ZBLAN fibres.
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Korneeva, Y. P., Mikhailov, M. Y., Pershin, Y. P., Manova, N. N., Divochiy, A. V., Vakhtomin, Y. B., et al. (2014). Superconducting single-photon detector made of MoSi film. Supercond. Sci. Technol., 27(9), 095012.
Abstract: We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film.
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Ozhegov, R., Elezov, M., Kurochkin, Y., Kurochkin, V., Divochiy, A., Kovalyuk, V., et al. (2014). Quantum key distribution over 300. In A. A. Orlikovsky (Ed.), Proc. SPIE (Vol. 9440, 1F (1 to 9)). SPIE.
Abstract: We discuss the possibility of polarization state reconstruction and measurement over 302 km by Superconducting Single- Photon Detectors (SSPDs). Because of the excellent characteristics and the possibility to be effectively coupled to singlemode optical fiber many applications of the SSPD have already been reported. The most impressive one is the quantum key distribution (QKD) over 250 km distance. This demonstration shows further possibilities for the improvement of the characteristics of quantum-cryptographic systems such as increasing the bit rate and the quantum channel length, and decreasing the quantum bit error rate (QBER). This improvement is possible because SSPDs have the best characteristics in comparison with other single-photon detectors. We have demonstrated the possibility of polarization state reconstruction and measurement over 302.5 km with superconducting single-photon detectors. The advantage of an autocompensating optical scheme, also known as “plugandplay” for quantum key distribution, is high stability in the presence of distortions along the line. To increase the distance of quantum key distribution with this optical scheme we implement the superconducting single photon detectors (SSPD). At the 5 MHz pulse repetition frequency and the average photon number equal to 0.4 we measured a 33 bit/s quantum key generation for a 101.7 km single mode ber quantum channel. The extremely low SSPD dark count rate allowed us to keep QBER at 1.6% level.
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Zhang, W., Miao, W., Zhong, J. Q., Shi, S. C., Hayton, D. J., Vercruyssen, N., et al. (2013). Temperature dependence of superconducting hot electron bolometers. In Not published results: 24th international symposium on space terahertz technology.
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Angeluts, A. A., Bezotosnyi, V. V., Cheshev, E. A., Goltsman, G. N., Finkel, M. I., Seliverstov, S. V., et al. (2014). Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity. Laser Phys. Lett., 11(1), 015004 (1 to 4).
Abstract: We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics.
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Shcherbatenko, M., Tretyakov, I., Lobanov, Y., Maslennikov, S. N., Kaurova, N., Finkel, M., et al. (2016). Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers. Appl. Phys. Lett., 109(13), 132602.
Abstract: We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device.
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