| Records |
| Author |
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
| Title |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
Type |
Journal Article |
| Year |
1996 |
Publication |
J. of Communications Technology and Electronics |
Abbreviated Journal |
J. of Communications Technology and Electronics |
| Volume |
41 |
Issue |
5 |
Pages |
408-414 |
| Keywords |
submillimeter waves, transmission |
| Abstract |
A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed. |
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1064-2269 |
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Notes  |
Радиотехника и электроника 41, no. 4 (1996): 441-447 |
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no |
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1611 |
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| Author |
Carlstrom, John E.; Jonas Zmuidzinas |
| Title |
Millimeter and Submillimeter Techniques |
Type |
Book Chapter |
| Year |
1996 |
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Pages |
848 |
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Oxford University Press Inc |
Place of Publication |
New York |
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Review of radio science 1993–1996 |
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34 |
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Published for the International Union of Radio Science |
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268 |
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| Author |
van de Stadt, H. |
| Title |
An improved 1 THz waveguide mixer |
Type |
Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
536 |
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Place of Publication |
Charlottesville, Virginia, USA |
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| Notes |
Probably other authors exist. |
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263 |
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| Author |
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
| Title |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
Type |
Journal Article |
| Year |
1996 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
| Volume |
53 |
Issue |
12 |
Pages |
R7592-R7595 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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| ISSN |
0163-1829 |
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| Notes |
PMID:9982274 |
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no |
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Serial |
1612 |
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| Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
| Title |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
Type |
Journal Article |
| Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
64 |
Issue |
5 |
Pages |
404-409 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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| Notes |
http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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Serial |
1608 |
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| Author |
Karasik, B. S.; Elantiev, A. I. |
| Title |
Noise temperature limit of a superconducting hot-electron bolometer mixer |
Type |
Journal Article |
| Year |
1996 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
68 |
Issue |
6 |
Pages |
853-855 |
| Keywords |
HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth |
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0003-6951 |
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no |
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260 |
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| Author |
Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
| Title |
Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer |
Type |
Journal Article |
| Year |
1996 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
68 |
Issue |
16 |
Pages |
2285-2287 |
| Keywords |
HEB mixer, diffusion cooling channel, diffusion channel |
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0003-6951 |
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no |
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262 |
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| Author |
Belitsky, V. Yu.; Kollberg, E. L. |
| Title |
Tuning circuit for NbN SIS mixer |
Type |
Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
234 |
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Place of Publication |
Charlottesville, Virginia, USA |
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no |
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Serial |
264 |
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| Author |
Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
| Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
Type |
Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
290-302 |
| Keywords |
NbN HEB mixers, fabrication process |
| Abstract |
We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Place of Publication |
Charlottesville, Virginia, USA |
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no |
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266 |
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| Author |
Ellison, B. N.; Maddison, B. J.; Matheson, D. N.; Oldfield, M. L.; Marazita, S.; Crowe, T. W.; Maaskant, P.; Kelly, W. M. |
| Title |
First results for a 2.5 THz Schottky diode waveguide mixer |
Type |
Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
494 |
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Place of Publication |
Charlottesville, Virginia, USA |
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no |
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Serial |
265 |
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