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Author Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.
Title Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure Type Journal Article
Year 1989 Publication Sov. Phys. and Technics of Semiconductors Abbreviated Journal Sov. Phys. and Technics of Semiconductors
Volume 23 Issue 8 Pages 843-846
Keywords Ge, crystallography
Abstract Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
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Notes (down) Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge Approved no
Call Number Serial 1692
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Author Korneev, A.; Finkel, M.; Maslennikov, S.; Korneeva, Yu.; Florya, I.; Tarkhov, M.; Elezov, M.; Ryabchun, S.; Tretyakov, I.; Isupova, A.; Voronov, B.; Goltsman, G.
Title Superconducting NbN terahertz detectors and infrared photon counters Type Journal Article
Year 2010 Publication Вестник НГУ. Серия: физ. Abbreviated Journal Вестник НГУ. Серия: физ.
Volume 5 Issue 4 Pages 68-72
Keywords HEB; HEB mixer
Abstract We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. Keywords: Hot electron bolometer mixers, infrared single-photon detectors, superconducting device fabrication, superconducting NbN films.
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Series Volume Series Issue Edition
ISSN 1818-7994 ISBN Medium
Area Expedition Conference
Notes (down) УДК 538.9 Approved no
Call Number RPLAB @ gujma @ Serial 708
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Author Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Prospects for using high-temperature superconductors to create electron bolometers Type Journal Article
Year 1989 Publication Pisma v Zhurnal Tekhnicheskoi Fiziki Abbreviated Journal Pisma v Zhurnal Tekhnicheskoi Fiziki
Volume 15 Issue 14 Pages 88-93
Keywords HTS HEB
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Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0320-0116 ISBN Medium
Area Expedition Conference
Notes (down) Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров Approved no
Call Number Serial 1693
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Author Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Limiting characteristic of fast superconducting bolometers Type Journal Article
Year 1989 Publication Sov. Phys.-Tech. Phys. Abbreviated Journal Sov. Phys.-Tech. Phys.
Volume 34 Issue Pages 195-199
Keywords HEB
Abstract Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
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Notes (down) О предельных характеристиках быстродействующих серхпроводниковых болометров Approved no
Call Number Serial 237
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Author Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.
Title Capture of free holes by charged acceptors in uniaxially deformed Ge Type Journal Article
Year 1988 Publication Fizika i Tekhnika Poluprovodnikov Abbreviated Journal Fizika i Tekhnika Poluprovodnikov
Volume 22 Issue 3 Pages 540-543
Keywords Ge, free holes, capture
Abstract Цель настоящей работы — исследование кинетики примесной фотопрово­димости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и опреде­ление сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии.
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Language Russian Summary Language Original Title
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Notes (down) Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge Approved no
Call Number Serial 1698
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Author Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G.
Title Superconducting single photon detector integrated with optical cavity Type Conference Article
Year 2011 Publication Proc. MLPLIT Abbreviated Journal Proc. MLPLIT
Volume Issue Pages 143-145
Keywords NbN SSPD, cavity
Abstract
Address Suzdal / Vladimir (Russia)
Corporate Author Thesis
Publisher Modern laser physics and laser-information technologies for science and manufacture Place of Publication Editor
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Area Expedition Conference 1st international russian-chinese conference / youthschool-workshop
Notes (down) September 23-28, 2011 Approved no
Call Number Serial 1385
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Author Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G.
Title Noise equivalent power and dynamic range of NBN hot-electron bolometers Type Conference Article
Year 2011 Publication Proc. MLPLIT Abbreviated Journal Proc. MLPLIT
Volume Issue Pages 146-148
Keywords NbN HEB
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Address Suzdal / Vladimir (Russia)
Corporate Author Thesis
Publisher Modern laser physics and laser-information technologies for science and manufacture Place of Publication Editor
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Area Expedition Conference 1st international russian-chinese conference / youthschool-workshop
Notes (down) September 23-28, 2011 Approved no
Call Number Serial 1386
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Author Goltsman, G.
Title Superconducting NbN hot-electron bolometer mixer, direct detector and single-photon counter: from devices to systems Type Report
Year 2009 Publication 2-nd Int. Conf. EUROFLUX Abbreviated Journal 2-nd Int. Conf. EUROFLUX
Volume Issue Pages
Keywords HEB, SSPD, SNSPD
Abstract
Address Avignon, France
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Notes (down) Provided by the SAO/NASA Astrophysics Data System Approved no
Call Number Serial 1398
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Author Tiulina, V.; Iomdina, E.; Goltsman, G.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Zaitsev, S.; Zernii, E.; Senin, I.
Title UVB promotes the initiation of uveitic inflammatory and changes in thehydration of the cornea in vivo Type Miscellaneous
Year 2019 Publication FEBS Open Bio Abbreviated Journal FEBS Open Bio
Volume 9 Issue S1 Pages 79
Keywords medicine; scheimpflug imaging; UVB; confocal microscopy; cornea; optical coherent tomography; rabbit eyes; terahertz radiation
Abstract Recently, active research has been conducted in the field of terahertz (THz) scanning of human tissues for non­invasive determination of their hydration level, which haves hown high diagnostic efficiency of this technology in various pathological conditions. Recently, we have developed a laboratory model of the facility for monitoring the state of the water balance of the cornea using THz scanning in vivo, which opens up the possibility of applying this approach in ophthalmology. The aim of the work wasto compare the results of the THz scan of the cornea with its clinical changes using the example of an experimental model of the UV­ induced keratouveitis. Anexperimental study, which included a comprehensive assessment of clinical changes in the cornea of rabbits during keratouveitis induction, revealed a decrease in the stability of the tear film, pathological changes in the corneal epithelium and stroma, as well as its anatomical and optical parameters. Comparison of data obtained in the THz scan of the cornea with tears production, optical coherence tomography and confocal microscopy showed their consistency in all observation periods, which allows us to conclude that the developed laboratory setup works and the feasibility of further research to promote the corneal hydration evaluation technology in clinical practice. Acknowledgements: Research was funded by the RSF, grant number 16­15­00255.
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ISSN 2211-5463 ISBN Medium
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Notes (down) Poster P-01-040 Approved no
Call Number Serial 1276
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Author Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A.
Title Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures Type Abstract
Year 2019 Publication Proc. Amorphous and Nanostructured Chalcogenides Abbreviated Journal Proc. Amorphous and Nanostructured Chalcogenides
Volume Issue Pages 47-48
Keywords optical waveguides
Abstract The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
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Publisher Technical University of Moldova Place of Publication Editor
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Notes (down) Poster Approved no
Call Number Serial 1281
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Author Iomdina, E. N.; Seliverstov, S. V.; Teplyakova, K. O.; Jani, E. V.; Pozdniakova, V. V.; Polyakova, O. N.; Goltsman, G. N.
Title Terahertz scanning of the rabbit cornea with experimental UVB-induced damage: in vivo assessment of hydration and its verification Type Journal Article
Year 2021 Publication J. Biomed. Opt. Abbreviated Journal J. Biomed. Opt.
Volume 26 Issue 4 Pages
Keywords medicine; scheimpflug imaging; UVB; confocal microscopy; cornea; optical coherent tomography; rabbit eyes; terahertz radiation
Abstract SIGNIFICANCE: Water content plays a vital role in the normally functioning visual system; even a minor disruption in the water balance may be harmful. Today, no direct method exists for corneal hydration assessment, while it could be instrumental in early diagnosis and control of a variety of eye diseases. The use of terahertz (THz) radiation, which is highly sensitive to water content, appears to be very promising. AIM: To find out how THz scanning parameters of corneal tissue measured by an experimental setup, specially developed for in vivo contactless estimations of corneal reflectivity coefficient (RC), are related to pathological changes in the cornea caused by B-band ultraviolet (UVB) exposure. APPROACH: The setup was tested on rabbit eyes in vivo. Prior to the course of UVB irradiation and 1, 5, and 30 days after it, a series of examinations of the corneal state was made. At the same time points, corneal hydration was assessed by measuring RC. RESULTS: The obtained data confirmed the negative impact of UVB irradiation course on the intensity of tear production and on the corneal thickness and optical parameters. A significant (1.8 times) increase in RC on the 5th day after the irradiation course, followed by a slight decrease on the 30th day after it was revealed. The RC increase measured 5 days after the UVB irradiation course generally corresponded to the increase (by a factor of 1.3) of tear production. RC increase occurred with the corneal edema, which was manifested by corneal thickening (by 18.2% in the middle area and 17.6% in corneal periphery) and an increased volume of corneal tissue (by 17.6%). CONCLUSIONS: Our results demonstrate that the proposed approach can be used for in vivo contactless estimation of the reflectivity of rabbit cornea in the THz range and, thereby, of cornea hydration.
Address National Research University Higher School of Economics, Moscow Institute of Electronics and Mathema, Russia
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Language English Summary Language Original Title
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Series Volume Series Issue Edition
ISSN 1083-3668 ISBN Medium
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Notes (down) PMID:33834684; PMCID:PMC8027227 Approved no
Call Number Serial 1258
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Author Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A.
Title Tunnel field-effect transistors for sensitive terahertz detection Type Journal Article
Year 2021 Publication Nat. Commun. Abbreviated Journal Nat. Commun.
Volume 12 Issue 1 Pages 543
Keywords field-effect transistors, bilayer graphene, BLG
Abstract The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
Address Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu
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ISSN 2041-1723 ISBN Medium
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Notes (down) PMID:33483488; PMCID:PMC7822863 Approved no
Call Number Serial 1261
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Author Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector Type Journal Article
Year 2020 Publication Nanomaterials (Basel) Abbreviated Journal Nanomaterials (Basel)
Volume 10 Issue 5 Pages 1-12
Keywords detector; quantum dots; short-wave infrared range; silicon
Abstract In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
Address Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia
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Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2079-4991 ISBN Medium
Area Expedition Conference
Notes (down) PMID:32365694; PMCID:PMC7712218 Approved no
Call Number Serial 1151
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Author Elezov, M.; Ozhegov, R.; Goltsman, G.; Makarov, V.
Title Countermeasure against bright-light attack on superconducting nanowire single-photon detector in quantum key distribution Type Journal Article
Year 2019 Publication Opt. Express Abbreviated Journal Opt. Express
Volume 27 Issue 21 Pages 30979-30988
Keywords SSPD, SNSPD
Abstract We present an active anti-latching system for superconducting nanowire single-photon detectors. We experimentally test it against a bright-light attack, previously used to compromise security of quantum key distribution. Although our system detects continuous blinding, the detector is shown to be partially blindable and controllable by specially tailored sequences of bright pulses. Improvements to the countermeasure are suggested.
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ISSN 1094-4087 ISBN Medium
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Notes (down) PMID:31684339 Approved no
Call Number Serial 1275
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Author Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I.
Title Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices Type Journal Article
Year 2018 Publication Nanotechnol. Abbreviated Journal Nanotechnol.
Volume 29 Issue 24 Pages 245204 (1 to 8)
Keywords single layer graphene, graphene nanoribbons
Abstract We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
Address Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia
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ISSN 0957-4484 ISBN Medium
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Notes (down) PMID:29553479 Approved no
Call Number Serial 1308
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