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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of electron and hole binding into excitons in germanium 1983 Sov. Phys. JETP 57 369-376 details   url
Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves 1986 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya 50 280-281 details   url
Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films 1995 JETP 80 960-964 details   openurl
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions 2002 Mater. Sci. Forum 384-3 107-116 details   url
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts 1999 Semicond. 33 551-554 details   doi
Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. Electron-phonon scattering rate in impure NbC films 1998 NASA/ADS Y35.08 details   url
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range 1997 Proc. 4-th Int. Semicond. Device Research Symp. 55-58 details   url
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure 1997 Proc. 4-th Int. Semicond. Device Research Symp. 163-166 details   url
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions 1996 Surface Science 361-362 569-573 details   doi
Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity 1996 Czech. J. Phys. 46 857-858 details   doi
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