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	Author	Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Золотов, Ф. И.; Вахтомин, Ю. Б.; Смирнов, К. В.
	Title	Высокоэффективные NBN однофотонные детекторы с разрешением числа фотонов			Type	Conference Article
	Year	2018	Publication	Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт.	Abbreviated Journal	Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт.
	Volume		Issue		Pages	400-401
	Keywords	SSPD, SNSPD
	Abstract	Разработаны и исследованы сверхпроводниковые однофотонные детекторы, способные к разрешению до 3-х фотонов в коротком импульсе излучения и имеющие квантовую эффективность детектирования одиночных фотонов ~60% на длине волны lambda=1.55 мкм. Проведенная модернизация технологии изготовления детекторов, позволила получить приемные устройства с мультифотонной квантовой эффективностью, приближающейся к расчетным значениям.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-2445-9	Medium
	Area		Expedition		Conference
	Notes	УДК 535(06)+004(06)			Approved	no
	Call Number				Serial	1250
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	Author	Симонов, Н. О.; Флоря, И. Н.; Корнеева, Ю. П.; Корнеев, А. А.; Гольцман, Г. Н.
	Title	Однофотонный отклик в тонких сверхпроводящих MoN_x пленках			Type	Conference Article
	Year	2018	Publication	Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт.	Abbreviated Journal	Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт.
	Volume		Issue		Pages	408-409
	Keywords	SSPD, SNSPD
	Abstract	Продемонстрирован однофотонный отклик, при токе близком к критическому, в MoNx сверхпроводящих полосках шириной 70-104 нм. MoNx детекторы, имеющие коэффициент диффузии D≈0.32 см2/с и время электрон-фононного взаимодействия ηe-ph≈300 пс, достигают квантовой эффективности QE≈20% на длине волны λ=1550 нм. Возможность реализации однофотонного детектора в данном материале, подтверждает существующую теорию вихревого механизма возникновения фотоотклика в узких сверхпроводящих полосках.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-2445-9	Medium
	Area		Expedition		Conference
	Notes	УДК 535(06)+004(06)			Approved	no
	Call Number				Serial	1251
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	Author	Золотов, Ф. И.; Дивочий, А. В.; Вахтомин, Ю. Б.; Пентин, И. В.; Морозов, П. В.; Селезнев, В. А.; Смирнов, К. В.
	Title	Применение тонких сверхпроводниковых пленок нитрида ванадия для изготовления счетчиков одиночных ИК-фотонов			Type	Conference Article
	Year	2018	Publication	Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт.	Abbreviated Journal	Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт.
	Volume		Issue		Pages	60-61
	Keywords	VN SSPD, SNSPD
	Abstract	Получены первые результаты по применению сверхпроводниковых пленок нитрида ванадия (VN) для детекторов одиночных фотонов ИК-диапазона. Изучение сверхпроводниковых однофотонных детекторов (SSPD), изготовленных на основе ультратонких (~5 нм) пленок VN, показало возможность создания устройств с близкой к насыщению зависимостью квантовой эффективности от тока смещения детекторов в телекоммуникационном диапазоне длин волн. Также нами были исследованы кинетическая индуктивность изготовленных структур с различной длиной сверхпроводниковой полоски и времена релаксации электронов в тонких сверхпроводниковых пленках VN.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-2445-9	Medium
	Area		Expedition		Conference
	Notes	УДК 535(06)+004(06)			Approved	no
	Call Number				Serial	1252
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	Author	Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I.
	Title	Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices			Type	Journal Article
	Year	2018	Publication	Nanotechnol.	Abbreviated Journal	Nanotechnol.
	Volume	29	Issue	24	Pages	245204 (1 to 8)
	Keywords	single layer graphene, graphene nanoribbons
	Abstract	We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
	Address	Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0957-4484	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:29553479			Approved	no
	Call Number				Serial	1308
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	Author	Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P.
	Title	Single photon detection system for visible and infrared spectrum range			Type	Journal Article
	Year	2018	Publication	Opt. Lett.	Abbreviated Journal	Opt. Lett.
	Volume	43	Issue	24	Pages	6085-6088
	Keywords
	Abstract	We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452-2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric downconversion, where one photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as 4x10(4) in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0146-9592	ISBN		Medium
	Area		Expedition		Conference
	Notes	https://arxiv.org/abs/1807.04273			Approved	no
	Call Number				Serial	1227
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	Author	Райтович, А. А.; Пентин, И. В.; Золотов, Ф. И.; Селезнев, В. А.; Вахтомин, Ю. Б.; Смирнов, К. В.
	Title	Время энергетической релаксации электронов в сверхпроводниковых VN наноструктурах			Type	Conference Article
	Year	2018	Publication	Сборник трудов 13 Всероссийской конференции молодых ученых	Abbreviated Journal
	Volume		Issue		Pages	236-238
	Keywords	VN films
	Abstract
	Address	Саратовский филиал ИРЭ им. В.А. Котельникова РАН
	Corporate Author				Thesis
	Publisher	Техно-Декор	Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Наноэлектроника, нанофотоника и нелинейная физика
	Notes	http://nnnph.ru/data/documents/Sborni-trudov-NNNF-2018.pdf			Approved	no
	Call Number				Serial	1807
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	Author	Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G.
	Title	Electron-phonon relaxation time in ultrathin tungsten silicon film			Type	Miscellaneous
	Year	2018	Publication	arXiv	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	WSi film
	Abstract	Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1341			Approved	no
	Call Number				Serial	1340
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	Author	Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneev, A. A.; Chulkova, G. M.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Goltsman, G. N.
	Title	Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film			Type	Miscellaneous
	Year	2018	Publication	arXiv	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	WSi films, diffusion constant, SSPD, SNSPD
	Abstract	We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1305			Approved	no
	Call Number				Serial	1341
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	Author	Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M.
	Title	Optical single photon detection in micron-scaled NbN bridges			Type	Miscellaneous
	Year	2018	Publication	arXiv	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	SSPD
	Abstract	We demonstrate experimentally that single photon detection can be achieved in micron-wide NbN bridges, with widths ranging from 0.53 μm to 5.15 μm and for photon-wavelengths from 408 nm to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50 % of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors (SSPDs), based on nanometer scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modelling based on the theory of non-equilibrium superconductivity including the vortex-assisted mechanism of initial dissipation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1303			Approved	no
	Call Number				Serial	1312
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	Author	Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G.
	Title	On-chip controlled placement of nanodiamonds with a nitrogen-vacancy color centers (NV)			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051046 (1 to 4)
	Keywords	nanodiamonds, NV-centers
	Abstract	Here we studied the fabrication technique of a kilopixel array of nanodiamonds with a nitrogen-vacancy color centers (NV) on top of the chip and measured the second-order correlation function deep, clearly demonstrated the presence of single-photon sources. The controlled position of nanodiamonds, determined from the measurement of second-order correlation fiction, was realize, as well as the yield of optimized technique equals 12.5% is shown.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1298
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	Author	Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G.
	Title	Resonant terahertz detection using graphene plasmons			Type	Journal Article
	Year	2018	Publication	Nat. Commun.	Abbreviated Journal	Nat. Commun.
	Volume	9	Issue		Pages	5392 (1 to 8)
	Keywords	THz, graphene plasmons
	Abstract	Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications.
	Address	Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2041-1723	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1148
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	Author	Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G.
	Title	Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer			Type	Journal Article
	Year	2018	Publication	Microelectronic Engineering	Abbreviated Journal	Microelectronic Engineering
	Volume	195	Issue		Pages	26-31
	Keywords
	Abstract	In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0167-9317	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1155
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	Author	An, P.; Kovalyuk, V.; Golikov, A.; Zubkova, E.; Ferrari, S.; Korneev, A.; Pernice, W.; Goltsman, G.
	Title	Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051047
	Keywords	planar O-ring resonators, Q-factor
	Abstract	In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1191
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	Author	Elezov, M. S.; Scherbatenko, M. L.; Sych, D. V.; Goltsman, G. N.
	Title	Active and passive phase stabilization for the all-fiber Michelson interferometer			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051014 (1 to 5)
	Keywords	Michelson interferometer, phase stabilization
	Abstract	We put forward two methods for phase stabilization in the all-fiber Michelson interferometer. To perform passive phase stabilization, we use a heat bath for all fibers and electro-optical components, and put the interferometer in a hermetic case. To perform active phase stabilization, we monitor output power of the interferometer and develop an electronic feedback control. The phase stabilization methods enable stable interference pattern for several minutes, and can be helpful for the development of the optimal quantum receiver for coherent signals.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1299
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	Author	Golikov, A.; Kovalyuk, V.; An, P.; Zubkova, E.; Ferrari, S.; Pernice, W.; Korneev, A.; Goltsman, G.
	Title	Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051051
	Keywords	O-ring resonator
	Abstract	Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2×105) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1193
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