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Prober, D. E. |
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Superconducting terahertz mixer using a transition-edge microbolometer |
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1993 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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62 |
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17 |
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2119-2121 |
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HEB mixer, NbN, TES |
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Recommended by Klapwijk |
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244 |
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Beebe, M. R.; Beringer, D. B.; Burton, M. C.; Yang, K.; Lukaszew, R. A. |
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Title |
Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films |
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Journal Article |
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Year |
2016 |
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
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34 |
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2 |
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021510 (1 to 4) |
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Keywords |
potential plagiarism, possible plagiarism, NbN films |
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The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB2 thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature TC, the authors are the first to report on the correlation between stoichiometry and the lower critical field HC1. |
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0734-2101 |
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Potential plagiarism for 1503 |
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1504 |
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Shcherbatenko, M.; Lobanov, Y.; Semenov, A.; Kovalyuk, V.; Korneev, A.; Ozhegov, R.; Kazakov, A.; Voronov, B.M.; Goltsman, G.N. |
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Title |
Potential of a superconducting photon counter for heterodyne detection at the telecommunication wavelength |
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Journal Article |
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Year |
2016 |
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Opt. Express |
Abbreviated Journal |
Opt. Express |
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24 |
Issue |
26 |
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30474-30484 |
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NbN SSPD mixer, SNSPD |
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Here, we report on the successful operation of a NbN thin film superconducting nanowire single-photon detector (SNSPD) in a coherent mode (as a mixer) at the telecommunication wavelength of 1550 nm. Providing the local oscillator power of the order of a few picowatts, we were practically able to reach the quantum noise limited sensitivity. The intermediate frequency gain bandwidth (also referred to as response or conversion bandwidth) was limited by the spectral band of a single-photon response pulse of the detector, which is proportional to the detector size. We observed a gain bandwidth of 65 MHz and 140 MHz for 7 x 7 microm2 and 3 x 3 microm2 devices, respectively. A tiny amount of the required local oscillator power and wide gain and noise bandwidths, along with unnecessary low noise amplification, make this technology prominent for various applications, with the possibility for future development of a photon counting heterodyne-born large-scale array. |
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1094-4087 |
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PMID:28059394 |
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1207 |
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Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. |
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Title |
Superconductivity in highly disordered NbN nanowires |
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Journal Article |
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2016 |
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Nanotechnol. |
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Nanotechnol. |
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27 |
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47 |
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47lt02 (1 to 8) |
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Keywords |
NbN nanowires |
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The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. |
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National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia |
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0957-4484 |
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PMID:27782000 |
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1332 |
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Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P. |
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Title |
Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits |
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Journal Article |
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Year |
2013 |
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Opt. Express |
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Opt. Express |
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Volume |
21 |
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19 |
Pages |
22683-22692 |
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Keywords |
SSPD, SNSPD, NbN nanoeires, Si3N4 waveguides |
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We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits. |
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1094-4087 |
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PMID:24104155 |
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1213 |
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