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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. url  openurl
  Title Capture of photoexcited carriers by shallow impurity centers in germanium Type Journal Article
  Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 50 Issue 4 Pages 728-734  
  Keywords Ge, photoexcited carriers, shallow impurity centers  
  Abstract Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1720  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. url  openurl
  Title Observation of free carrier resonances in p-type germanium at submillimeter wavelengths Type Journal Article
  Year 1978 Publication Sov. Phys. Solid State Abbreviated Journal Sov. Phys. Solid State  
  Volume 20 Issue 4 Pages 573-579  
  Keywords p-Ge, free carriers, resonances  
  Abstract The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1721  
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. url  openurl
  Title Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors Type Conference Article
  Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya  
  Volume 42 Issue 6 Pages 1231-1234  
  Keywords spectrum, semiconductors, admixtures, strong magnetic-field  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number blagosklonskaya1978effect Serial 1724  
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. url  openurl
  Title Effect of a strong magnetic field on the spectrum of donors in InSb Type Journal Article
  Year 1978 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 11 Issue 12 Pages 1395-1397  
  Keywords InSb, spectrum of donors, strong magnetic field  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1725  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. url  openurl
  Title Energy spectrum of acceptors in germanium and its response to a magnetic field Type Journal Article
  Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 45 Issue 4 Pages 769-776  
  Keywords p-Ge, photoconductivity, energy spectrum, magnetic field  
  Abstract We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1727  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. url  openurl
  Title Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field Type Journal Article
  Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 45 Issue 3 Pages 555-565  
  Keywords Ge, GaAs, magnetic field, donors, energy spectrum  
  Abstract The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1728  
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Author Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. url  openurl
  Title Intervalley cyclotron-impurity resonance of electrons in n-Ge Type Journal Article
  Year 1976 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 24 Issue 3 Pages 125-128  
  Keywords n-Ge, cyclotron-impurity resonance  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1730  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Investigation of free excitons in Ge and their condensation at submillimeter wavelengths Type Journal Article
  Year 1976 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 43 Issue 1 Pages 116-122  
  Keywords Ge, free excitons  
  Abstract Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1731  
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Author Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. url  openurl
  Title Investigation of population and ionization of donor excited states in Ge Type Conference Article
  Year 1976 Publication Physics of Semiconductors Abbreviated Journal Physics of Semiconductors  
  Volume Issue Pages 631-634  
  Keywords Ge, donor excited states  
  Abstract  
  Address Amsterdam  
  Corporate Author Thesis  
  Publisher North-Holland Publishing Co. Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1732  
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. url  openurl
  Title Investigation of excited donor states in GaAs Type Journal Article
  Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 7 Issue 10 Pages 1248-1250  
  Keywords GaAs, excited donor states  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1733  
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Author Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. url  openurl
  Title Energy spectrum of free excitons in germanium Type Journal Article
  Year 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 18 Issue 3 Pages 93  
  Keywords Ge, free excitons, energy spectrum  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1734  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Submillimeter spectroscopy of semiconductors Type Journal Article
  Year 1973 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 37 Issue 2 Pages 299-304  
  Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons  
  Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1735  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. url  openurl
  Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 5 Pages 185-186  
  Keywords Ge, Si, neutral impurity atom, binding energy  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1739  
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Author Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 2 Pages 63-65  
  Keywords Ge, donors, excited states  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1740  
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. url  openurl
  Title Germanium hot-electron narrow-band detector Type Journal Article
  Year 1971 Publication Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics  
  Volume 16 Issue 8 Pages 1346  
  Keywords Ge HEB detectors  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1741  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. url  openurl
  Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 6 Pages 241  
  Keywords Ge, gamma irradiation, defects, impurities  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1742  
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Author Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. url  doi
openurl 
  Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.  
  Volume 73 Issue 1 Pages 44-47  
  Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field  
  Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1752  
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Author Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. url  doi
openurl 
  Title Electron–phonon interaction in disordered conductors Type Journal Article
  Year 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter  
  Volume 263-264 Issue Pages 190-192  
  Keywords disordered conductors, electron-phonon interaction  
  Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1765  
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Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. url  doi
openurl 
  Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
  Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 56 Issue 16 Pages 10089-10096  
  Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity  
  Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1766  
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Author Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. url  doi
openurl 
  Title Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films Type Conference Article
  Year 1996 Publication Czech J. Phys. Abbreviated Journal Czech J. Phys.  
  Volume 46 Issue S5 Pages 2489-2490  
  Keywords Al, Be, Nb films  
  Abstract The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0011-4626 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1767  
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Author Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
  Year 1975 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 40 Issue 2 Pages 311-315  
  Keywords Ge, cyclotron resonance  
  Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1768  
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Author Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions Type Journal Article
  Year 1976 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников  
  Volume 10 Issue Pages 1379-1383  
  Keywords Ge, cyclotron resonance, charged impurities,  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1772  
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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. url  openurl
  Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
  Year 1975 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 22 Issue 4 Pages 95-97  
  Keywords Ge, impurities, excited states, absorption spectra  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1773  
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Author Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields Type Journal Article
  Year 1972 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников  
  Volume 6 Issue Pages 362-363  
  Keywords Ge, cyclotron resonance, quantizing magnetic fields  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1774  
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Author Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E. url  doi
openurl 
  Title NbN hot electron superconducting mixers for 100 GHz operation Type Journal Article
  Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 5 Issue 2 Pages 3065-3068  
  Keywords NbN HEB mixers  
  Abstract NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes (up) About LO power required Approved no  
  Call Number Serial 255  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. url  openurl
  Title Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state Type Journal Article
  Year 1988 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.  
  Volume 14 Issue 7 Pages 414-420  
  Keywords HEB  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Duplicated as 1697 Approved no  
  Call Number Serial 236  
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Author Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Energy relaxation of two-dimensional electrons in the quantum Hall effect regime Type Journal Article
  Year 2000 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 71 Issue 1 Pages 31-34  
  Keywords 2DEG, GaAs/AlGaAs heterostructures  
  Abstract The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes (up) http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) Approved no  
  Call Number Serial 1559  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
  Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 64 Issue 5 Pages 404-409  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes (up) http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no  
  Call Number Serial 1608  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  doi
openurl 
  Title Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches Type Conference Article
  Year 1992 Publication Progress in High Temperature Superconductivity Abbreviated Journal Progress in High Temperature Superconductivity  
  Volume 32 Issue Pages 190-195  
  Keywords superconducting films, heating of electrons  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference International Conference on High Temperature Superconductivity and Localization Phenomena , Moscow, Russia , 11 – 15 May 1991  
  Notes (up) https://books.google.co.kr/books?hl=en&lr=&id=uCI0DwAAQBAJ&oi=fnd&pg=PA190&ots=z7WGjXYWr4&sig=TQ6G6dKsmcj4faYe1ZLw_BFmps8 Approved no  
  Call Number Serial 1666  
Permanent link to this record
 
 
Author Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. url  doi
openurl 
  Title Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films Type Conference Article
  Year 1993 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 2104 Issue Pages 183-184  
  Keywords YBCO HTS HEB detectors  
  Abstract Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W.  
  Address  
  Corporate Author Thesis  
  Publisher Spie Place of Publication Editor Birch, J.R.; Parker, T.J.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 18th International Conference on Infrared and Millimeter Waves  
  Notes (up) https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 Approved no  
  Call Number 10.1117/12.2298489 Serial 1653  
Permanent link to this record
 
 
Author Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation Type Journal Article
  Year 1994 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal Phys. Rev. B Condens. Matter.  
  Volume 49 Issue 13 Pages 9091-9096  
  Keywords YBCO films  
  Abstract The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes (up) PMID:10009690 Approved no  
  Call Number Serial 1648  
Permanent link to this record
 
 
Author Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. url  doi
openurl 
  Title Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses Type Journal Article
  Year 1993 Publication Opt. Lett. Abbreviated Journal Opt. Lett.  
  Volume 18 Issue 2 Pages 96-97  
  Keywords YBCO HTS detectors  
  Abstract We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0146-9592 ISBN Medium  
  Area Expedition Conference  
  Notes (up) PMID:19802049 Approved no  
  Call Number Serial 1660  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time Type Journal Article
  Year 1996 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal Phys. Rev. B Condens. Matter.  
  Volume 53 Issue 12 Pages R7592-R7595  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes (up) PMID:9982274 Approved no  
  Call Number Serial 1612  
Permanent link to this record
 
 
Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. url  openurl
  Title Effect of a high magnetic field on the spectrum of donors in InSb Type Journal Article
  Year 1977 Publication Fizika i Tekhnika Poluprovodnikov Abbreviated Journal Fizika i Tekhnika Poluprovodnikov  
  Volume 11 Issue 12 Pages 2373-2375  
  Keywords InSb, energy spectrum, donors, high magnetic field  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Воздействие сильного магнитного поля на спектр доноров в InSb Approved no  
  Call Number Serial 1729  
Permanent link to this record
 
 
Author Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. url  openurl
  Title Capture of free holes by charged acceptors in uniaxially deformed Ge Type Journal Article
  Year 1988 Publication Fizika i Tekhnika Poluprovodnikov Abbreviated Journal Fizika i Tekhnika Poluprovodnikov  
  Volume 22 Issue 3 Pages 540-543  
  Keywords Ge, free holes, capture  
  Abstract Цель настоящей работы — исследование кинетики примесной фотопрово­димости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и опреде­ление сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge Approved no  
  Call Number Serial 1698  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A. url  openurl
  Title Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation Type Conference Article
  Year 1994 Publication Council on Low-temp. Phys. Abbreviated Journal Council on Low-temp. Phys.  
  Volume Issue Pages 82-83  
  Keywords YBCO HTS HEB  
  Abstract  
  Address Dubna  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Joint Inst. for Nuclear Research, Dubna (Russian Federation); 296 p; 1994; p. 82-83; 30. Conference on low-temperature physics; 30. Soveshchanie po fizike nizkikh temperatur; Dubna (Russian Federation); 6-8 Sep 1994  
  Notes (up) Неравновесный и болометрический отклик YBaCuO пленок в резиотивном состоянии на инфракрасное лазерное излучение малой интенсивности Approved no  
  Call Number Serial 1632  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state Type Journal Article
  Year 1982 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 36 Issue 7 Pages 296-299  
  Keywords HEB  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии Approved no  
  Call Number Serial 1717  
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Author Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Limiting characteristic of fast superconducting bolometers Type Journal Article
  Year 1989 Publication Sov. Phys.-Tech. Phys. Abbreviated Journal Sov. Phys.-Tech. Phys.  
  Volume 34 Issue Pages 195-199  
  Keywords HEB  
  Abstract Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) О предельных характеристиках быстродействующих серхпроводниковых болометров Approved no  
  Call Number Serial 237  
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Author Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Prospects for using high-temperature superconductors to create electron bolometers Type Journal Article
  Year 1989 Publication Pisma v Zhurnal Tekhnicheskoi Fiziki Abbreviated Journal Pisma v Zhurnal Tekhnicheskoi Fiziki  
  Volume 15 Issue 14 Pages 88-93  
  Keywords HTS HEB  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0320-0116 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров Approved no  
  Call Number Serial 1693  
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Author Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. url  openurl
  Title On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data Type Journal Article
  Year 1996 Publication J. of Communications Technology and Electronics Abbreviated Journal J. of Communications Technology and Electronics  
  Volume 41 Issue 5 Pages 408-414  
  Keywords submillimeter waves, transmission  
  Abstract A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1064-2269 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Радиотехника и электроника 41, no. 4 (1996): 441-447 Approved no  
  Call Number Serial 1611  
Permanent link to this record
 
 
Author Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. url  openurl
  Title Superconductive properties of ultrathin NbN films on different substrates Type Journal Article
  Year 1994 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume 7 Issue 6 Pages 1097-1102  
  Keywords NbN films  
  Abstract A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0131-5366 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках Approved no  
  Call Number Serial 1631  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. url  openurl
  Title Submillimeter backward wave tube spectrometer for measuring superconducting film transmission Type Journal Article
  Year 1983 Publication Pribory i Tekhnika Eksperimenta Abbreviated Journal Pribory i Tekhnika Eksperimenta  
  Volume 26 Issue 5 Pages 134-137  
  Keywords BWO spectroscopy, spectrometer, transmission  
  Abstract A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0032-8162 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок Approved no  
  Call Number Serial 1713  
Permanent link to this record
 
 
Author Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. url  openurl
  Title Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure Type Journal Article
  Year 1989 Publication Sov. Phys. and Technics of Semiconductors Abbreviated Journal Sov. Phys. and Technics of Semiconductors  
  Volume 23 Issue 8 Pages 843-846  
  Keywords Ge, crystallography  
  Abstract Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge Approved no  
  Call Number Serial 1692  
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