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Gershenzon, E. M., Gol'tsman, G. N., & Mirskii, G. I. (1987). Submillimeter backward-wave-tube spectrometer-relaxometer. Pribory i Tekhnika Eksperimenta, 30(4), 131–137.
Abstract: A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops.
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Gershenzon, E. M., & Gol'tsman, G. N. (1988). Effect of electromagnetic radiation on a superconductor in a magnetic field. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 52, pp. 449–451).
Abstract: The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films.
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Gershenzon, E. M., Gol'tsman, G. N., Karasik, B. S., & Semenov, A. D. (1987). Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum. JETP Lett., 46(5), 237–238.
Abstract: For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Karasik, B. S., Semenov, A. D., & Sergeev, A. V. (1987). Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound. JETP Lett., 46(6), 285–287.
Abstract: For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals.
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Gershenzon, E. M., Gol'tsman, G. N., Ptitsina, N. G., & Riger, E. R. (1986). Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium. Sov. Phys. JETP, 64(4), 889–897.
Abstract: Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1972). Observation of the free-exciton spectrum at submillimeter wavelengths. JETP Lett., 16(4), 161–162.
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Gershenzon, E. M., Goltsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1982). Kinetics of submillimeter impurity and exciton photoconduction in Ge. Optics and Spectroscopy, 52(4), 454–455.
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Gershenzon, E., Gershenzon, M. E., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1981). Heating of quasiparticles in a superconducting film in the resistive state. JETP Lett., 34(5), 268–271.
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Gershenzon, E. M., Gol'tsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1981). Cross section for binding of free carriers into excitons in germanium. JETP Lett., 33(11), 574.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1979). Population and lifetime of excited states of shallow impurities in Ge. Sov. Phys. JETP, 49(2), 355–362.
Abstract: An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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