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Sidorova, M., Semenov, A., Korneev, A., Chulkova, G., Korneeva, Y., Mikhailov, M., et al. (2018). Electron-phonon relaxation time in ultrathin tungsten silicon film. arXiv:1607.07321v1 [physics.ins-det]. Retrieved July 1, 2024, from https://arxiv.org/abs/1607.07321v1
Abstract: Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.
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Verevkin, A., Zhang, J., Pearlman, A., Slysz, W., Sobolewski, R., Korneev, A., et al. (2004). Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range.
Abstract: We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices.
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Marksteiner, M., Divochiy, A., Sclafani, M., Haslinger, P., Ulbricht, H., Korneev, A., et al. (2009). A superconducting NbN detector for neutral nanoparticles. Nanotechnol., 20(45), 455501.
Abstract: We present a proof-of-principle study of superconducting single photon detectors (SSPD) for the detection of individual neutral molecules/nanoparticles at low energies. The new detector is applied to characterize a laser desorption source for biomolecules and allows retrieval of the arrival time distribution of a pulsed molecular beam containing the amino acid tryptophan, the polypeptide gramicidin as well as insulin, myoglobin and hemoglobin. We discuss the experimental evidence that the detector is actually sensitive to isolated neutral particles.
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Sclafani, M., Marksteiner, M., Keir, F. M. L., Divochiy, A., Korneev, A., Semenov, A., et al. (2012). Sensitivity of a superconducting nanowire detector for single ions at low energy. Nanotechnol., 23(6), 065501 (1 to 5).
Abstract: We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles.
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Kovalyuk, V., Hartmann, W., Kahl, O., Kaurova, N., Korneev, A., Goltsman, G., et al. (2013). Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits. Opt. Express, 21(19), 22683–22692.
Abstract: We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits.
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