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Author Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. url  doi
openurl 
  Title Electron energy relaxation in disordered superconducting NbN films Type Journal Article
  Year 2020 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 102 Issue 5 Pages 054501 (1 to 15)  
  Keywords NbN SSPD, SNSPD, HEB, bandwidth, relaxation time  
  Abstract We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1266  
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Author Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. url  doi
openurl 
  Title Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid Type Journal Article
  Year 2020 Publication J. Luminescence Abbreviated Journal J. Luminescence  
  Volume 220 Issue Pages 117008 (1 to 7)  
  Keywords Ag2S QD, quantum dots  
  Abstract The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA.  
  Address  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-2313 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1267  
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Author Shcherbatenko, M. L.; Elezov, M. S.; Goltsman, G. N.; Sych, D. V. url  doi
openurl 
  Title Sub-shot-noise-limited fiber-optic quantum receiver Type Journal Article
  Year 2020 Publication Phys. Rev. A Abbreviated Journal Phys. Rev. A  
  Volume 101 Issue 3 Pages 032306 (1 to 5)  
  Keywords SSPD mixer, SNSPD  
  Abstract We experimentally demonstrate a quantum receiver based on the Kennedy scheme for discrimination between two phase-modulated weak coherent states. The receiver is assembled entirely from standard fiber-optic elements and operates at a conventional telecom wavelength of 1.55 μm. The local oscillator and the signal are transmitted through different optical fibers, and the displaced signal is measured with a high-efficiency superconducting nanowire single-photon detector. We show the discrimination error rate is two times below that of a shot-noise-limited receiver with the same system detection efficiency.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9926 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1268  
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Author Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. url  doi
openurl 
  Title On chip carbon nanotube tunneling spectroscopy Type Journal Article
  Year 2020 Publication Fullerenes, Nanotubes and Carbon Nanostructures Abbreviated Journal  
  Volume 28 Issue 1 Pages 50-53  
  Keywords carbon nanotubes, CNT, scanning tunneling microscope, STM  
  Abstract We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes.  
  Address  
  Corporate Author Thesis  
  Publisher Taylor & Francis Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number doi:10.1080/1536383X.2019.1671365 Serial 1269  
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Author Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory url  openurl
  Title Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors Type Abstract
  Year 2020 Publication Graphene and 2dm Virt. Conf. Abbreviated Journal Graphene and 2DM Virt. Conf.  
  Volume Issue Pages  
  Keywords single layer graphene, SLG, CVD, plasmons, FET  
  Abstract Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464.  
  Address Grenoble, France  
  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Graphene and 2dm Virtual Conference & Expo  
  Notes (up) Approved no  
  Call Number Serial 1743  
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Author Dryazgov, M.; Semenov, A.; Manova, N.; Korneeva, Y.; Korneev, A. url  doi
openurl 
  Title Modelling of normal domain evolution after single-photon absorption of a superconducting strip of micron width Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012195 (1 to 4)  
  Keywords SSPD modelling, SNSPD  
  Abstract The present paper describes a modelling of normal domain evolution in superconducting strip of micron width using solving differential equations describing the temperature and current changes. The solving results are compared with experimental data. This comparison demonstrates the high accuracy of the model. In future, it is possible to employ this model for improvement of single photon detector based on micron-scale superconducting strips.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1785  
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Author Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A. url  doi
openurl 
  Title Developing of NbN films for superconducting microstrip single-photon detector Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012116 (1 to 5)  
  Keywords NbN SSPD, SNSPD, NbN films  
  Abstract We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1786  
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Author Polyakova, M. I.; Korneev, A. A.; Semenov, A. V. url  doi
openurl 
  Title Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012146 (1 to 3)  
  Keywords NbN SSPD, SNSPD, MoSi  
  Abstract In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1787  
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Author Vodolazov, D. Y.; Manova, N. N.; Korneeva, Y. P.; Korneev, A. A. url  doi
openurl 
  Title Timing jitter in NbN superconducting microstrip single-photon detector Type Journal Article
  Year 2020 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied  
  Volume 14 Issue 4 Pages 044041 (1 to 8)  
  Keywords NbN SSPD, SNSPD  
  Abstract We experimentally study timing jitter of single-photon detection by NbN superconducting strips with width w ranging from 190 nm to 3μm. We find that timing jitter of both narrow (190 nm) and micron-wide strips is about 40 ps at currents where internal detection efficiency η saturates and it is close to our instrumental jitter. We also calculate intrinsic timing jitter in wide strips using the modified time-dependent Ginzburg-Landau equation coupled with a two-temperature model. We find that with increasing width the intrinsic timing jitter increases and the effect is most considerable at currents where a rapid growth of η changes to saturation. We relate it with complicated vortex and antivortex dynamics, which depends on a photon’s absorption site across the strip and its width. The model also predicts that at current close to depairing current the intrinsic timing jitter of a wide strip could be about ℏ/kBTc (Tc is a critical temperature of superconductor), i.e., the same as for a narrow strip.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2331-7019 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1788  
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Author Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y. url  doi
openurl 
  Title Superconducting microstructures with high impedance Type Journal Article
  Year 2020 Publication Phys. Solid State Abbreviated Journal Phys. Solid State  
  Volume 62 Issue 9 Pages 1539-1542  
  Keywords superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance  
  Abstract The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7834 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1789  
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Author Korneeva, Y. P.; Manova, N. N.; Florya, I. N.; Mikhailov, M. Y.; Dobrovolskiy, O. V.; Korneev, A. A.; Vodolazov, D. Y. url  doi
openurl 
  Title Different single-photon response of wide and narrow superconducting MoxSi1−x strips Type Journal Article
  Year 2020 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied  
  Volume 13 Issue 2 Pages 024011 (1 to 7)  
  Keywords MoSi SSPD, SNSPD  
  Abstract The photon count rate (PCR) of superconducting single-photon detectors made of MoxSi1−x films shaped as a 2-μm-wide strip and a 115-nm-wide meander strip line is studied experimentally as a function of the dc biasing current at different values of the perpendicular magnetic field. For the wide strip, a crossover current Icross is observed, below which the PCR increases with an increasing magnetic field and above which it decreases. This behavior contrasts with the narrow MoxSi1−x meander, for which no crossover current is observed, thus suggesting different photon-detection mechanisms in the wide and narrow strips. Namely, we argue that in the wide strip the absorbed photon destroys superconductivity locally via the vortex-antivortex mechanism for the emergence of resistance, while in the narrow meander superconductivity is destroyed across the whole strip line, forming a hot belt. Accordingly, the different photon-detection mechanisms associated with vortices and the hot belt determine the qualitative difference in the dependence of the PCR on the magnetic field.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2331-7019 ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1790  
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Author Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title Integrated contra-directional coupler for NV-centers photon filtering Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume Issue Pages 354-360  
  Keywords NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings  
  Abstract We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes (up) Approved no  
  Call Number Serial 1839  
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Author Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume Issue Pages 344-348  
  Keywords  
  Abstract The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength.  
  Address NV-centers, nanodiamonds  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes (up) Approved no  
  Call Number Serial 1840  
Permanent link to this record
 

 
Author Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. url  doi
openurl 
  Title Influence of deposited material energy on superconducting properties of the WSi films Type Conference Article
  Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.  
  Volume 781 Issue Pages 012013 (1 to 6)  
  Keywords WSi SSPD, SNSPD  
  Abstract WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1757-899X ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1798  
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Author Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. url  doi
openurl 
  Title Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range Type Conference Article
  Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.  
  Volume 781 Issue Pages 012011 (1 to 5)  
  Keywords WSi, NbN SSPD, SNSPD  
  Abstract Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1757-899X ISBN Medium  
  Area Expedition Conference  
  Notes (up) Approved no  
  Call Number Serial 1799  
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