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Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. |
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Title |
Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
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Year |
2005 |
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Phys. Stat. Sol. (C) |
Abbreviated Journal |
Phys. Stat. Sol. (C) |
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2 |
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5 |
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1480-1488 |
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NbN SSPD, SNSPD |
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Abstract |
We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range. |
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1610-1634 |
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1479 |
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Rubtsova, I.; Korneev, A.; Matvienko, V.; Chulkova, G.; Milostnaya, I.; Goltsman, G.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
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Spectral sensitivity, quantum efficiency, and noise equivalent power of NbN superconducting single-photon detectors in the IR range |
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Conference Article |
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2004 |
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Proc. 29th IRMMW / 12th THz |
Abbreviated Journal |
Proc. 29th IRMMW / 12th THz |
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461-462 |
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NbN SSPD, SNSPD |
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We have developed nanostructured NbN superconducting single-photon detectors capable of GHz-rate photon counting in the 0.4 to 5 /spl mu/m wavelength range. Quantum efficiency of 30%, dark count rate 3/spl times/10/sup -4/ s/sup -1/, and NEP=10/sup -20/ W/Hz/sup -1/2/ have been measured at the 1.3-/spl mu/m wavelength for the device operating at 2.0 K. |
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1507 |
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Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
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Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors |
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1999 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3338-3341 |
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NbN SSPD, SNSPD |
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We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films. |
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1051-8223 |
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1566 |
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Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. |
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Fast NbN superconducting switch controlled by optical radiation |
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1997 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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7 |
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2 |
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3734-3737 |
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NbN superconducting switch |
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The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits. |
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1051-8223 |
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1596 |
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Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M. |
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Title |
High speed current switching of homogeneous YBaCuO film between superconducting and resistive states |
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Journal Article |
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1995 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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5 |
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2 |
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3042-3045 |
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YBCO HTS HEB switches |
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Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively. |
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1051-8223 |
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1620 |
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