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Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory |
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Performance of an HEB direct detector utilizing a microwave reflection readout scheme |
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2015 |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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HEB detector |
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We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014. |
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Tretyakov, I.; Maslennikov, S.; Semenov, A.; Safir, O.; Finkel, M.; Ryabchun, S.; Kaurova, N.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
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Title |
Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers |
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Conference Article |
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2015 |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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39 |
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NbN HEB mixers |
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Hot-electron bolometer mixers (HEB’s) are the most promising devices as mixing element for terahertz spectroscopy and astronomy at frequencies beyond 1.4 THz. They have a low noise temperature and low demands on local oscillator (LO) power. 1,2 An important limitation is the IF bandwidth, of the order of a few GHz, and which in principle depends on energy relaxation due to electron- phonon processes and on diffusion-cooling. It has been proposed by Prober that a reduction in length of the HEB would lead to an increased bandwidth. 3 This appeared to be achieved by Tretyakov et al by measuring the gain bandwidth close to the critical temperature of the NbN. 2 Unfortunately, the noise bandwidth of similar devices operated at temperatures around 4.2 K appear not depend on the length. The fundamental problem to be addressed is the position-dependent superconducting state of the HEB- devices under operating conditions, which determines the conditions for the cooling of the hot quasiparticles. Some progress has been made by Barends et al in a semi-empirical model to describe the I,V curves under operating conditions at a bath temperature around 4.2 K. 4 In more recent work Vercruyssen et al have analyzed the I,V curve, without any LO-equivalent bias, of a model NSN system. 5 This work suggests that the most appropriate model for an HEB under operating conditions is that of a potential-well in the superconducting gap in the center of the NbN, analogous the bimodal superconducting state described by Vercruyssen et al. Hot quasiparticles in the well can not diffuse out and can only cool by electron-phonon processes, those with higher energies than the heights of the walls of the well can diffuse out. Using this working hypothesis we have carried out experiments on a sub-micrometer NbN bridge connected to a gold (Au) planar spiral antenna. An in situ process is used to deposit Au on NbN. The Au is removed in the center to define the uncovered NbN, which will act as the superconducting mixer itself. The antenna is deposited on the remaining Au layer on the NbN. The Au contacts suppress the energy gap of the NbN film located underneath the gold layer 7,8 . The measured resistive transition is shown in Fig.1. It clearly shows a T c of the bilayer at 6.2 K and the resistive transition of the NbN itself around 9 K. In addition we show the measured noise bandwidth (red squares) for different bath temperatures. Clearly the noise bandwidth increases strongly by increasing the bath temperature from 5 K to 8 K, up to 13 GHz. We interpret this pattern as evidence for improved out-diffusion of hot electrons due to normal banks and a shallow superconducting potential well compared to k B T. As expected the noise temperature in this regime is much bigger than when biased at 4.2 K. R EFERENCES 1 W. Zhang, P. Khosropanah, J. R. Gao, E. L. Kollberg, K. S. Yngvesson, T. Bansal, R. Barends, and T. M. Klapwijk Appl. Phys. Lett. 96, 111113, (2010). 2 Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman Appl. Phys. Lett. 98, 033507 (2011). 3 D. E. Prober, Appl. Phys. Lett. 62, 2119 (1992). 4 R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk, Appl. Phys. Lett. 87, 263506 (2005). 5 N. Vercruyssen, T. G. A. Verhagen, M. G. Flokstra, J. P. Pekola, and T. M. Klapwijk Physical Review B 85, 224503 (2012). |
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Trifonov, Andrey; Tong, C. Edward; Lobanov, Yury; Kaurova, Natalia; Blundell, Raymond; Gol’tsman, Gregory |
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An investigation of the DC and IF performance of silicon-membrane HEB mixer elements |
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Conference Article |
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2015 |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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40 |
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silicon-membrane HEB waveguide mixer |
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We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K. |
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1160 |
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Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. |
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Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films |
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2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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1-4 |
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TiN MKID |
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We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor. |
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1051-8223 |
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1296 |
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Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
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Response of graphene based gated nanodevices exposed to THz radiation |
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2015 |
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EPJ Web of Conferences |
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EPJ Web of Conferences |
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103 |
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10003 (1 to 2) |
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graphene field-effect transistor, FET |
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In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
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2100-014X |
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1350 |
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Kurochkin, V. L.; Zverev, A. V.; Kurochkin, Y. V.; Ryabtsev, I. I.; Neizvestnyi, I. G.; Ozhegov, R. V.; Gol’tsman, G. N.; Larionov, P. A. |
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Long-distance fiber-optic quantum key distribution using superconducting detectors |
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2015 |
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Proc. Optoelectron. Instrum. |
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Proc. Optoelectron. Instrum. |
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51 |
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6 |
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548-552 |
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QKD, SSPD, SNSPD |
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This paper presents the results of experimental studies on quantum key distribution in optical fiber using superconducting detectors. Key generation was obtained on an experimental setup based on a self-compensation optical circuit with an optical fiber length of 101.1 km. It was first shown that photon polarization encoding can be used for quantum key distribution in optical fiber over a distance in excess of 300 km. |
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1342 |
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Vodolazov, D. Y.; Korneeva, Y. P.; Semenov, A. V.; Korneev, A. A.; Goltsman, G. N. |
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Vortex-assisted mechanism of photon counting in a superconducting nanowire single-photon detector revealed by external magnetic field |
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2015 |
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Phys. Rev. B |
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Phys. Rev. B |
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92 |
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10 |
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104503 (1 to 9) |
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SSPD, SNSPD |
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We use an external magnetic field to probe the detection mechanism of a superconducting nanowire single-photon detector. We argue that the hot belt model (which assumes partial suppression of the superconducting order parameter Δ across the whole width of the superconducting nanowire after absorption of the photon) does not explain observed weak-field dependence of the photon count rate (PCR) for photons with λ=450nm and noticeable decrease of PCR (with increasing the magnetic field) in a range of the currents for photons with wavelengths λ=450–1200nm. Found experimental results for all studied wavelengths can be explained by the vortex hot spot model (which assumes partial suppression of Δ in the area with size smaller than the width of the nanowire) if one takes into account nucleation and entrance of the vortices to the photon induced hot spot and their pinning by the hot spot with relatively large size and strongly suppressed Δ. |
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1098-0121 |
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1343 |
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Elezov, M. S.; Ozhegov, R. V.; Kurochkin, Y. V.; Goltsman, G. N.; Makarov, V. S.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
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Countermeasures against blinding attack on superconducting nanowire detectors for QKD |
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2015 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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103 |
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10002 (1 to 2) |
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SSPD, SNSPD, QKD |
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Nowadays, the superconducting single-photon detectors (SSPDs) are used in Quantum Key Distribution (QKD) instead of single-photon avalanche photodiodes. Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing technique. We developed the autoreset system which returns the SSPD to superconducting state when it is latched. We investigate latched state of the SSPD and define limit conditions for effective blinding attack. Peculiarity of the blinding attack is a long nonsingle photon response of the SSPD. It is much longer than usual single photon response. Besides, we need follow up response duration of the SSPD. These countermeasures allow us to prevent blind attack on SSPDs for Quantum Key Distribution. |
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1352 |
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Mehdi, I.; Gol'tsman, G.; Putz, P. |
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Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) |
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Miscellaneous |
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2015 |
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IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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5 |
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1 |
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14-15 |
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THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented.
In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/).
You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml
Yours sincerely |
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Tong, C.-Y. E.; Trifonov, A.; Shurakov, A.; Blundell, R.; Gol’tsman, G. |
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A microwave-operated hot-electron-bolometric power detector for terahertz radiation |
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2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300604 (1 to 4) |
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NbN HEB mixer |
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A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW. |
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