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Author Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N.
Title Superconductivity in highly disordered NbN nanowires Type Journal Article
Year 2016 Publication Nanotechnol. Abbreviated Journal Nanotechnol.
Volume 27 Issue 47 Pages 47lt02 (1 to 8)
Keywords NbN nanowires
Abstract The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.
Address National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia
Corporate Author Thesis
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Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Medium
Area Expedition Conference
Notes (up) PMID:27782000 Approved no
Call Number Serial 1332
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Author Shcherbatenko, M.; Lobanov, Y.; Semenov, A.; Kovalyuk, V.; Korneev, A.; Ozhegov, R.; Kazakov, A.; Voronov, B.M.; Goltsman, G.N.
Title Potential of a superconducting photon counter for heterodyne detection at the telecommunication wavelength Type Journal Article
Year 2016 Publication Opt. Express Abbreviated Journal Opt. Express
Volume 24 Issue 26 Pages 30474-30484
Keywords NbN SSPD mixer, SNSPD
Abstract Here, we report on the successful operation of a NbN thin film superconducting nanowire single-photon detector (SNSPD) in a coherent mode (as a mixer) at the telecommunication wavelength of 1550 nm. Providing the local oscillator power of the order of a few picowatts, we were practically able to reach the quantum noise limited sensitivity. The intermediate frequency gain bandwidth (also referred to as response or conversion bandwidth) was limited by the spectral band of a single-photon response pulse of the detector, which is proportional to the detector size. We observed a gain bandwidth of 65 MHz and 140 MHz for 7 x 7 microm2 and 3 x 3 microm2 devices, respectively. A tiny amount of the required local oscillator power and wide gain and noise bandwidths, along with unnecessary low noise amplification, make this technology prominent for various applications, with the possibility for future development of a photon counting heterodyne-born large-scale array.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1094-4087 ISBN Medium
Area Expedition Conference
Notes (up) PMID:28059394 Approved no
Call Number Serial 1207
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Author Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R.
Title Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers Type Journal Article
Year 2017 Publication Beilstein J. Nanotechnol. Abbreviated Journal Beilstein J. Nanotechnol.
Volume 8 Issue Pages 38-44
Keywords carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials
Abstract Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.
Address Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2190-4286 ISBN Medium
Area Expedition Conference
Notes (up) PMID:28144563; PMCID:PMC5238692 Approved no
Call Number RPLAB @ kovalyuk @ Serial 1109
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Author Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Shcherbatenko, M.; Lobanov, Y.; Ozhegov, R.; Korneev, A.; Kaurova, N.; Voronov, B.; Pernice, W.; Gol'tsman, G.
Title On-chip coherent detection with quantum limited sensitivity Type Journal Article
Year 2017 Publication Sci Rep Abbreviated Journal Sci Rep
Volume 7 Issue 1 Pages 4812
Keywords waveguide, SSPD, SNSPD
Abstract While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 10(11). By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously.
Address National Research University Higher School of Economics, Moscow, 101000, Russia. ggoltsman@hse.ru
Corporate Author Thesis
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Medium
Area Expedition Conference
Notes (up) PMID:28684752; PMCID:PMC5500578 Approved no
Call Number RPLAB @ kovalyuk @ Serial 1129
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Author Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I.
Title Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices Type Journal Article
Year 2018 Publication Nanotechnol. Abbreviated Journal Nanotechnol.
Volume 29 Issue 24 Pages 245204 (1 to 8)
Keywords single layer graphene, graphene nanoribbons
Abstract We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
Address Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia
Corporate Author Thesis
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Medium
Area Expedition Conference
Notes (up) PMID:29553479 Approved no
Call Number Serial 1308
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Author Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B.
Title Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion Type Journal Article
Year 2019 Publication Opt. Lett. Abbreviated Journal Opt. Lett.
Volume 44 Issue 5 Pages 1198-1201
Keywords HEB applications
Abstract We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed.
Address
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0146-9592 ISBN Medium
Area Expedition Conference
Notes (up) PMID:30821747 Approved no
Call Number Serial 1801
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Author Elezov, M.; Ozhegov, R.; Goltsman, G.; Makarov, V.
Title Countermeasure against bright-light attack on superconducting nanowire single-photon detector in quantum key distribution Type Journal Article
Year 2019 Publication Opt. Express Abbreviated Journal Opt. Express
Volume 27 Issue 21 Pages 30979-30988
Keywords SSPD, SNSPD
Abstract We present an active anti-latching system for superconducting nanowire single-photon detectors. We experimentally test it against a bright-light attack, previously used to compromise security of quantum key distribution. Although our system detects continuous blinding, the detector is shown to be partially blindable and controllable by specially tailored sequences of bright pulses. Improvements to the countermeasure are suggested.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1094-4087 ISBN Medium
Area Expedition Conference
Notes (up) PMID:31684339 Approved no
Call Number Serial 1275
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Author Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector Type Journal Article
Year 2020 Publication Nanomaterials (Basel) Abbreviated Journal Nanomaterials (Basel)
Volume 10 Issue 5 Pages 1-12
Keywords detector; quantum dots; short-wave infrared range; silicon
Abstract In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
Address Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia
Corporate Author Thesis
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Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2079-4991 ISBN Medium
Area Expedition Conference
Notes (up) PMID:32365694; PMCID:PMC7712218 Approved no
Call Number Serial 1151
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Author Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S.
Title Helicity-sensitive plasmonic terahertz interferometer Type Journal Article
Year 2020 Publication Nano Lett. Abbreviated Journal Nano Lett.
Volume 20 Issue 10 Pages 7296-7303
Keywords graphene, plasmonic interferometer, radiation helicity, terahertz radiation
Abstract Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials.
Address CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland
Corporate Author Thesis
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1530-6984 ISBN Medium
Area Expedition Conference
Notes (up) PMID:32903004 Approved no
Call Number Serial 1781
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Author Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K.
Title Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation Type Journal Article
Year 2020 Publication Sci. Rep. Abbreviated Journal Sci. Rep.
Volume 10 Issue 1 Pages 16819
Keywords VN HEB
Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
Address National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Medium
Area Expedition Conference
Notes (up) PMID:33033360; PMCID:PMC7546726 Approved no
Call Number Serial 1797
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Author Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P.
Title THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites Type Journal Article
Year 2020 Publication Polymers (Basel) Abbreviated Journal Polymers (Basel)
Volume 12 Issue 12 Pages 3037 (1 to 14)
Keywords THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS
Abstract Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed.
Address Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland
Corporate Author Thesis
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Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2073-4360 ISBN Medium
Area Expedition Conference
Notes (up) PMID:33353036; PMCID:PMC7767186 Approved no
Call Number Serial 1780
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Author Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A.
Title Tunnel field-effect transistors for sensitive terahertz detection Type Journal Article
Year 2021 Publication Nat. Commun. Abbreviated Journal Nat. Commun.
Volume 12 Issue 1 Pages 543
Keywords field-effect transistors, bilayer graphene, BLG
Abstract The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
Address Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu
Corporate Author Thesis
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Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2041-1723 ISBN Medium
Area Expedition Conference
Notes (up) PMID:33483488; PMCID:PMC7822863 Approved no
Call Number Serial 1261
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Author Morozov, P.; Lukina, M.; Shirmanova, M.; Divochiy, A.; Dudenkova, V.; Gol'tsman, G. N.; Becker, W.; Shcheslavskiy, V. I.
Title Singlet oxygen phosphorescence imaging by superconducting single-photon detector and time-correlated single-photon counting Type Journal Article
Year 2021 Publication Opt. Lett. Abbreviated Journal Opt. Lett.
Volume 46 Issue 6 Pages 1217-1220
Keywords SSPD, SNSPD, applications
Abstract This Letter presents, to the best of our knowledge, a novel optical configuration for direct time-resolved measurements of luminescence from singlet oxygen, both in solutions and from cultured cells on photodynamic therapy. The system is based on the superconducting single-photon detector, coupled to the confocal scanner that is modified for the near-infrared measurements. The recording of a phosphorescence signal from singlet oxygen at 1270 nm has been done using time-correlated single-photon counting. The performance of the system is verified by measuring phosphorescence from singlet oxygen generated by the photosensitizers commonly used in photodynamic therapy: methylene blue and chlorin e6. The described system can be easily upgraded to the configuration when both phosphorescence from singlet oxygen and fluorescence from the cells can be detected in the imaging mode. Thus, co-localization of the signal from singlet oxygen with the areas inside the cells can be done.
Address
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Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0146-9592 ISBN Medium
Area Expedition Conference
Notes (up) PMID:33720151 Approved no
Call Number Serial 1221
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Author Iomdina, E. N.; Seliverstov, S. V.; Teplyakova, K. O.; Jani, E. V.; Pozdniakova, V. V.; Polyakova, O. N.; Goltsman, G. N.
Title Terahertz scanning of the rabbit cornea with experimental UVB-induced damage: in vivo assessment of hydration and its verification Type Journal Article
Year 2021 Publication J. Biomed. Opt. Abbreviated Journal J. Biomed. Opt.
Volume 26 Issue 4 Pages
Keywords medicine; scheimpflug imaging; UVB; confocal microscopy; cornea; optical coherent tomography; rabbit eyes; terahertz radiation
Abstract SIGNIFICANCE: Water content plays a vital role in the normally functioning visual system; even a minor disruption in the water balance may be harmful. Today, no direct method exists for corneal hydration assessment, while it could be instrumental in early diagnosis and control of a variety of eye diseases. The use of terahertz (THz) radiation, which is highly sensitive to water content, appears to be very promising. AIM: To find out how THz scanning parameters of corneal tissue measured by an experimental setup, specially developed for in vivo contactless estimations of corneal reflectivity coefficient (RC), are related to pathological changes in the cornea caused by B-band ultraviolet (UVB) exposure. APPROACH: The setup was tested on rabbit eyes in vivo. Prior to the course of UVB irradiation and 1, 5, and 30 days after it, a series of examinations of the corneal state was made. At the same time points, corneal hydration was assessed by measuring RC. RESULTS: The obtained data confirmed the negative impact of UVB irradiation course on the intensity of tear production and on the corneal thickness and optical parameters. A significant (1.8 times) increase in RC on the 5th day after the irradiation course, followed by a slight decrease on the 30th day after it was revealed. The RC increase measured 5 days after the UVB irradiation course generally corresponded to the increase (by a factor of 1.3) of tear production. RC increase occurred with the corneal edema, which was manifested by corneal thickening (by 18.2% in the middle area and 17.6% in corneal periphery) and an increased volume of corneal tissue (by 17.6%). CONCLUSIONS: Our results demonstrate that the proposed approach can be used for in vivo contactless estimation of the reflectivity of rabbit cornea in the THz range and, thereby, of cornea hydration.
Address National Research University Higher School of Economics, Moscow Institute of Electronics and Mathema, Russia
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1083-3668 ISBN Medium
Area Expedition Conference
Notes (up) PMID:33834684; PMCID:PMC8027227 Approved no
Call Number Serial 1258
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Author Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
Title Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time Type Journal Article
Year 1996 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal Phys. Rev. B Condens. Matter.
Volume 53 Issue 12 Pages R7592-R7595
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes (up) PMID:9982274 Approved no
Call Number Serial 1612
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