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Author Il'in, K.; Siegel, M.; Semenov, A.; Engel, A.; Hübers, H.-W.; Hollmann, E.; Gol'tsman, G.; Voronov, B.
Title Thickness dependence of superconducting properties of ultrathin Nb and NbN films Type Conference Article
Year 2004 Publication AKF-Frühjahrstagung Abbreviated Journal
Volume Issue Pages
Keywords Nb, NbN films, has potential plagiarism
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Call Number Serial 1503
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Author Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman
Title Characterization of the electron energy relaxation process in NbN hot-electron devices Type Conference Article
Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 390-397
Keywords HEB mixers, SSPD, SNSPD, NbN films, Nb films
Abstract We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.
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Call Number Serial 1576
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Author Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M.
Title Electron-phonon interaction in disordered NbN films Type Journal Article
Year 1994 Publication Phys. B Condens. Mat. Abbreviated Journal Phys. B Condens. Mat.
Volume 194-196 Issue Pages 1355-1356
Keywords NbN films
Abstract Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
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ISSN 0921-4526 ISBN Medium
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Call Number Serial 1649
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Author Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O.
Title Increase of reproducibility in production of superconducting thin films of niobium nitride Type Journal Article
Year 1992 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika
Volume 5 Issue 10 Pages 1950-1954
Keywords NbN films
Abstract Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value.
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ISSN 0131-5366 ISBN Medium
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Call Number Serial 1675
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Author Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S.
Title Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates Type Journal Article
Year 2021 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied
Volume 15 Issue 5 Pages 054014
Keywords InOx, Au/Ni, NbN films
Abstract We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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ISSN 2331-7019 ISBN Medium
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Notes (up) Approved no
Call Number Serial 1769
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