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| Author | Korneeva, Y. P.; Manova, N. N.; Dryazgov, M. A.; Simonov, N. O.; Zolotov, P. I.; Korneev, A. A. | ||||
| Title | Influence of sheet resistance and strip width on the detection efficiency saturation in micron-wide superconducting strips and large-area meanders | Type | Journal Article | ||
| Year | 2021 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 34 | Issue | 8 | Pages | 084001 |
| Keywords | NbN SSPD, SMSPD | ||||
| Abstract | We report our study of detection efficiency (DE) saturation in wavelength range 400 – 1550 nm for the NbN Superconducting Microstrip Single-Photon Detectors (SMSPD) featuring the strip width up to 3 μm. We observe an expected decrease of the $DE$ saturation plateau with the increase of photon wavelength and decrease of film sheet resistance. At 1.7 K temperature DE saturation can be clearly observed at 1550 nm wavelength in strip with the width up to 2 μm when sheet resistance of the film is above 630Ω/sq. In such strips the length of the saturation plateau almost does not depend on the strip width. We used these films to make meander-shaped detectors with the light sensitive area from 20×20μm2 to a circle 50 μm in diameter. In the latter case, the detector with the strip width of 0.49 μm demonstrates saturation of DE up to 1064 nm wavelength. Although DE at 1310 and 1550 nm is not saturated, it is as high as 60%. The response time is limited by the kinetic inductance and equals to 20 ns(by 1/e decay), timing jitter is 44 ps. When coupled to multi-mode fibre large-area meanders demonstrate significantly higher dark count rate which we attribute to thermal background photons, thus advanced filtering technique would be required for practical applications. | ||||
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| ISSN | 0953-2048 | ISBN | Medium | ||
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Approved | no | |||
| Call Number | Serial | 1793 | |||
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| Author | Пентин, И. В.; Смирнов, К. В.; Вахтомин, Ю. Б.; Смирнов, А. В.; Ожегов, Р. В.; Дивочий, А. В.; Гольцман, Г. Н. | ||||
| Title | Быстродействующий терагерцевый приемник и инфракрасный счетчик одиночных фотонов на эффекте разогрева электронов в сверхпроводниковых тонкопленочных наноструктурах | Type | Journal Article | ||
| Year | 2011 | Publication | Труды МФТИ | Abbreviated Journal | Труды МФТИ |
| Volume | 3 | Issue | 2 | Pages | 38-42 |
| Keywords | SSPD, SNSPD, HEB | ||||
| Abstract | Представлены результаты создания приемных систем терагерцевого диапазона (0.3-70 ТГц), обладающих рекордным быстродействием (50 пс) и высокой чувствительностью (до 5x 10^(-14) Вт/Гц^(1/2)), а также однофотонных приемных систем ближнего инфракрасного диапазона с квантовой эффективностью 25 %, уровнем темнового счета 10-1c., максимальной скоростью счета ~ 100 МГц и временным разрешением до 50 пс. | ||||
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Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 707 | ||
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| Author | Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Golts'man, G.; Gershenzon, E.; Voronov B. | ||||
| Title | Superconductive NbN hot-electron bolometric mixer performance at 250 GHz | Type | Conference Article | ||
| Year | 1996 | Publication | Proc. 7th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 7th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 331-336 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract | Thin film NbN (<40 A) strips are used as waveguide mixer elements. The electron cooling mechanism for the geometry is the electron-phonon interaction. We report a receiver noise temperature of 750 K at 244 GHz, with / IF = 1.5 GHz, Af= 500 MHz, and Tphysical = 4 K. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator (LO) power is 0.5 1.tW with 3 dB-uncertainty. The mixer is linear to 1 dB up to an input power level 6 dB below the LO power. We report the first detection of a molecular line emission using this class of mixer, and that the receiver noise temperature determined from Y-factor measurements reflects the true heterodyne sensitivity. | ||||
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Approved | no | |||
| Call Number | Serial | 945 | |||
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| Author | Verevkin, A.; Zhang, J.; Slysz, W.; Sobolewski, Roman; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smimov, K.; Gol'tsman, G. N. | ||||
| Title | Spectral sensitivity and temporal resolution of NbN superconducting single-photon detectors | Type | Conference Article | ||
| Year | 2002 | Publication | Proc. 13th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 13th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 105-111 | ||
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We report our studies on spectral sensitivity and time resolution of superconducting NbN thin film single-photon detectors (SPDs). Our SPDs exhibit an everimentally measured detection efficiencies (DE) from — 0.2% at 2=1550 nm up to —3% at lambda=405 nm wavelength for 10-nm film thickness devices and up to 3.5% at lambda=1550 nm for 3.5-nm film thickness devices. Spectral dependences of detection efficiency (DE) at 2=0.4 —3.0 pm range are presented. With variable optical delay setup, it is shown that NbN SPD potentially can resolve optical pulses with the repetition rate up to 10 GHz at least. The observed full width at the half maximum (FWHM) of the signal pulse is about 150-180 ps, limited by read-out electronics. The jitter of NbN SPD is measured to be —35 ps at optimum biasing. | ||||
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Approved | no | |||
| Call Number | Serial | 1528 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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