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Baselmans, J. J. A.; Hajenius, M.; Gao, J.; de Korte, P.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
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Title |
Doubling of sensitivity and bandwidth in phonon-cooled hot-electron bolometer mixers |
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Conference Article |
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Year |
2004 |
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Proc. SPIE |
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Proc. SPIE |
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5498 |
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168-176 |
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Keywords |
Hot electron bolometers, bandwidth, noise temperature, experimental |
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NbN hot electron bolometer (HEB) mixers are at this moment the best heterodyne detectors for frequencies above 1 THz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. This results in a contact resistance between the NbN bolometer and the contact pad. We compare identical bolometers, with different NbN – contact pad interfaces, coupled with a spiral antenna. We find that cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature and the bandwidth of the HEB mixers with more than a factor of 2. We obtain a DSB noise temperature of 950 K at 2.5 THz and a Gain bandwidth of 5-6 GHz. For use in real receiver systems we design small volume (0.15x1 micron) HEB mixers with a twin slot antenna. We find that these mixers combine good sensitivity (900 K at 1.6 THz) with low LO power requirement, which is 160 – 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5. |
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SPIE |
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Zmuidzinas, J.; Holland, W.S.; Withington, S. |
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Millimeter and Submillimeter Detectors for Astronomy II |
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1744 |
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Author |
Goltsman, Gregory |
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Title |
Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors |
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Conference Article |
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2017 |
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16th ISEC |
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16th ISEC |
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Th-I-QTE-03 (1 to 3) |
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waveguide SSPD, SNSPD |
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We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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IEEE/CSC & ESAS Superconductivity News Forum |
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1745 |
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Gol’tsman, G.N. |
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Title |
Overview of recent results for superconducting NbN terahertz and optical detectors and mixers |
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Miscellaneous |
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2014 |
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SM2 – Seminar on Terahertz Photonics |
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0562 |
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NbN SSPD, SNSPD, HEB |
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We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. |
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1746 |
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Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V. |
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Title |
Tunable frequency-selective surface based on superconducting split-ring resonators |
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Conference Article |
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2014 |
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8th Metamaterials |
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8th Metamaterials |
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superconducting split-ring resonators |
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We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator. |
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Copenhagen, Denmark |
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8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics – Metamaterials |
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1749 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
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Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
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Journal Article |
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2001 |
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Jetp Lett. |
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Jetp Lett. |
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73 |
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1 |
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44-47 |
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uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
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The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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1752 |
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