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Bondarenko, O. I., Gershenzon, E. M., Gurvich, Y. A., Orlova, S. L., & Ptitsina, N. G. (1972). Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields. Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников, 6, 362–363.
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Eletskii, A. V., Sarychev, A. K., Boginskaya, I. A., Bocharov, G. S., Gaiduchenko, I. A., Egin, M. S., et al. (2018). Amplification of a Raman scattering signal by carbon nanotubes. Dokl. Phys., 63(12), 496–498.
Abstract: The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
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Fedorov, G. E., Stepanova, T. S., Gazaliev, A. S., Gaiduchenko, I. A., Kaurova, N. S., Voronov, B. M., et al. (2016). Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection. Semicond., 50(12), 1600–1603.
Abstract: Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.
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Ryzhii, V., Otsuji, T., Ryzhii, M., Leiman, V. G., Fedorov, G., Goltzman, G. N., et al. (2016). Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection. J. Appl. Phys., 120(4), 044501 (1 to 13).
Abstract: We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.
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Dube, I., Jiménez, D., Fedorov, G., Boyd, A., Gayduchenko, I., Paranjape, M., et al. (2015). Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors. Carbon, 87, 330–337.
Abstract: Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics.
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Akhmadishina, K. F., Bobrinetskiy, I. I., Komarov, I. A., Malovichko, A. M., Nevolin, V. K., Fedorov, G. E., et al. (2015). Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers. Semicond., 49(13), 1749–1753.
Abstract: The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin.
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Korneev, A. A. (2021). Superconducting NbN microstrip single-photon detectors. In I. Prochazka, M. Štefaňák, R. Sobolewski, & A. Gábris (Eds.), Proc. Quantum Optics and Photon Counting (Vol. 11771). SPIE.
Abstract: Superconducting Single-Photon Detectors (SSPD) invented two decades ago have evolved to a mature technology and have become devices of choice in the advanced applications of quantum optics, such as quantum cryptography and optical quantum computing. In these applications SSPDs are coupled to single-mode fibers and feature almost unity detection efficiency, negligible dark counts, picosecond timing jitter and MHz photon count rate. Meanwhile, there are great many applications requiring coupling to multi-mode fibers or free space. ‘Classical’ SSPDs with 100-nm-wide superconducting strip and covering area of about 100 µm2 are not suitable for further scaling due to degradation of performance and low fabrication yield. Recently we have demonstrated single-photon counting in micron-wide superconducting bridges and strips. Here we present our approach to the realization of practical photon-counting detectors of large enough area to be efficiently coupled to multi-mode fibers or free space. The detector is either a meander or a spiral of 1-µm-wide strip covering an area of 50x50 µm2. Being operated at 1.7K temperature it demonstrates the saturated detection efficiency (i.e. limited by the absorption in the detector) up to 1550 nm wavelength, about 10 ns dead time and timing jitter in range 50-100 ps.
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Dryazgov, M., Semenov, A., Manova, N., Korneeva, Y., & Korneev, A. (2020). Modelling of normal domain evolution after single-photon absorption of a superconducting strip of micron width. In J. Phys.: Conf. Ser. (Vol. 1695, 012195 (1 to 4)).
Abstract: The present paper describes a modelling of normal domain evolution in superconducting strip of micron width using solving differential equations describing the temperature and current changes. The solving results are compared with experimental data. This comparison demonstrates the high accuracy of the model. In future, it is possible to employ this model for improvement of single photon detector based on micron-scale superconducting strips.
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Manova, N. N., Simonov, N. O., Korneeva, Y. P., & Korneev, A. A. (2020). Developing of NbN films for superconducting microstrip single-photon detector. In J. Phys.: Conf. Ser. (Vol. 1695, 012116 (1 to 5)).
Abstract: We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20.
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Polyakova, M. I., Korneev, A. A., & Semenov, A. V. (2020). Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films. In J. Phys.: Conf. Ser. (Vol. 1695, 012146 (1 to 3)).
Abstract: In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width.
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