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  Author Title Year Publication Volume Pages Links
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. Effect of a strong magnetic field on the spectrum of donors in InSb 1978 Sov. Phys. Semicond. 11 1395-1397 details   url
Verevkin, A.; Williams, C.; Gol’tsman, G. N.; Sobolewski, R.; Gilbert, G. Single-photon superconducting detectors for practical high-speed quantum cryptography 2001 OFCC/ICQI Pa3 details   doi
Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman Time-resolved characterization of NbN superconducting single-photon optical detectors 2017 Proc. SPIE 10313 103130F (1 to 3) details   doi
Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N. Quasi-1-dimensional superconductivity in highly disordered NbN nanowires 2016 arXiv details   url
Beck, M.; Klammer, M.; Lang, S.; Leiderer, P.; Kabanov, V. V.; Gol’tsman, G. N.; Demsar, J. Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy 2011 arXiv details   url
Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors 2007 Appl. Phys. Lett. 91 031106 (1 to 3) details   doi
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. Energy relaxation of two-dimensional electrons in the quantum Hall effect regime 2000 JETP Lett. 71 31-34 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409 details   doi
Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer 2003 J. of communications technol. & electronics 48 671-675 details   url
Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation 1994 Phys. Rev. B Condens. Matter. 49 9091-9096 details   doi
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 74 474-479 details   doi
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons 2010 Semicond. 44 1427-1429 details   doi
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