| Records |
| Author |
Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N. |
| Title |
Ultrafast superconducting single-photon optical detectors |
Type |
Conference Article |
| Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
5123 |
Issue |
|
Pages |
1-11 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography. |
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| Publisher |
SPIE |
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Editor |
Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A. |
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Conference |
Advanced Optical Devices, Technologies, and Medical Applications |
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no |
| Call Number |
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Serial |
1513 |
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| Author |
Verevkin, A. A.; Pearlman, A.; Slysz, W.; Zhang, J.; Sobolewski, R.; Chulkova, G.; Okunev, O.; Kouminov, P.; Drakinskij, V.; Smirnov, K.; Kaurova, N.; Voronov, B.; Gol’tsman, G.; Currie, M. |
| Title |
Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications |
Type |
Conference Article |
| Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
5105 |
Issue |
|
Pages |
160-170 |
| Keywords |
NbN SSPD, SNSPD, applications, single-photon detector, quantum cryptography, quantum communications, superconducting devices |
| Abstract |
We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed. |
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SPIE |
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Editor |
Donkor, E.; Pirich, A.R.; Brandt, H.E. |
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Conference |
Quantum Information and Computation |
| Notes |
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no |
| Call Number |
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Serial |
1514 |
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| Author |
Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. |
| Title |
Fabrication of nanostructured superconducting single-photon detectors |
Type |
Journal Article |
| Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
13 |
Issue |
2 |
Pages |
192-195 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed. |
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Edition |
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| ISSN |
1558-2515 |
ISBN |
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no |
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Serial |
1515 |
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| Author |
Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. |
| Title |
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection |
Type |
Journal Article |
| Year |
2016 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
| Volume |
50 |
Issue |
12 |
Pages |
1600-1603 |
| Keywords |
carbon nanotubes, CNT detectors |
| Abstract |
Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed. |
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Series Issue |
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Edition |
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| ISSN |
1063-7826 |
ISBN |
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no |
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Serial |
1776 |
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| Author |
Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
| Title |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
Type |
Journal Article |
| Year |
2003 |
Publication |
J. of communications technol. & electronics |
Abbreviated Journal |
J. of communications technol. & electronics |
| Volume |
48 |
Issue |
6 |
Pages |
671-675 |
| Keywords |
NbN HEB mixers |
| Abstract |
Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
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Thesis |
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| Publisher |
MAIK Nauka/Interperiodica, Birmingham, AL |
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Editor |
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Original Title |
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| Series Editor |
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Series Title |
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Series Issue |
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Edition |
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| ISSN |
1064-2269 |
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| Notes |
https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
Approved |
no |
| Call Number |
Vakhtomin2003 |
Serial |
1522 |
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| Author |
Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P. |
| Title |
Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits |
Type |
Journal Article |
| Year |
2013 |
Publication |
Opt. Express |
Abbreviated Journal |
Opt. Express |
| Volume |
21 |
Issue |
19 |
Pages |
22683-22692 |
| Keywords |
SSPD, SNSPD, NbN nanoeires, Si3N4 waveguides |
| Abstract |
We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits. |
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Edition |
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| ISSN |
1094-4087 |
ISBN |
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| Notes |
PMID:24104155 |
Approved |
no |
| Call Number |
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Serial |
1213 |
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| Author |
Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Shcherbatenko, M.; Lobanov, Y.; Ozhegov, R.; Korneev, A.; Kaurova, N.; Voronov, B.; Pernice, W.; Gol'tsman, G. |
| Title |
On-chip coherent detection with quantum limited sensitivity |
Type |
Journal Article |
| Year |
2017 |
Publication |
Sci Rep |
Abbreviated Journal |
Sci Rep |
| Volume |
7 |
Issue |
1 |
Pages |
4812 |
| Keywords |
waveguide, SSPD, SNSPD |
| Abstract |
While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 10(11). By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously. |
| Address |
National Research University Higher School of Economics, Moscow, 101000, Russia. ggoltsman@hse.ru |
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Edition |
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2045-2322 |
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| Notes |
PMID:28684752; PMCID:PMC5500578 |
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no |
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RPLAB @ kovalyuk @ |
Serial |
1129 |
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| Author |
Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
Type |
Journal Article |
| Year |
2020 |
Publication |
Nanomaterials (Basel) |
Abbreviated Journal |
Nanomaterials (Basel) |
| Volume |
10 |
Issue |
5 |
Pages |
1-12 |
| Keywords |
detector; quantum dots; short-wave infrared range; silicon |
| Abstract |
In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
| Address |
Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
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English |
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2079-4991 |
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| Notes |
PMID:32365694; PMCID:PMC7712218 |
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no |
| Call Number |
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Serial |
1151 |
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| Author |
Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
| Title |
Helicity-sensitive plasmonic terahertz interferometer |
Type |
Journal Article |
| Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
| Volume |
20 |
Issue |
10 |
Pages |
7296-7303 |
| Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
| Abstract |
Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
| Address |
CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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Edition |
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| ISSN |
1530-6984 |
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| Notes |
PMID:32903004 |
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no |
| Call Number |
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Serial |
1781 |
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| Author |
Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol’tsman, G. |
| Title |
Superconducting NbN-nanowire single-photon detectors capable of photon number resolving |
Type |
Conference Article |
| Year |
2008 |
Publication |
Supercond. News Forum |
Abbreviated Journal |
Supercond. News Forum |
| Volume |
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Issue |
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Pages |
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| Keywords |
PNR SSPD, SNSPD |
| Abstract |
We present our latest generation of ultra-fast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). The novel SSPDs combine 10 μm x 10 μm active area with low kinetic inductance and PNR capability. That resulted in significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector’s response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performance of the PNR SSPDs. These detectors are perfectly suited for fibreless free-space telecommunications, as well as for ultra-fast quantum cryptography and quantum computing. |
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Reference No. ST34, paper # 012307, eventually not pulished (skipped) at https://iopscience.iop.org/issue/0953-2048/21/1 |
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no |
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RPLAB @ sasha @ korneevsuperconducting |
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1046 |
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