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| Author |
Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneev, A. A.; Chulkova, G. M.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Goltsman, G. N. |
| Title |
Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film |
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Miscellaneous |
| Year |
2018 |
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arXiv |
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WSi films, diffusion constant, SSPD, SNSPD |
| Abstract |
We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques. |
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Duplicated as 1305 |
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1341 |
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Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M. |
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Optical single photon detection in micron-scaled NbN bridges |
Type |
Miscellaneous |
| Year |
2018 |
Publication |
arXiv |
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SSPD |
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We demonstrate experimentally that single photon detection can be achieved in micron-wide NbN bridges, with widths ranging from 0.53 μm to 5.15 μm and for photon-wavelengths from 408 nm to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50 % of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors (SSPDs), based on nanometer scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modelling based on the theory of non-equilibrium superconductivity including the vortex-assisted mechanism of initial dissipation. |
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Duplicated as 1303 |
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1312 |
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Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
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Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs |
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Journal Article |
| Year |
2010 |
Publication |
Изв. РАН Сер. Физ. |
Abbreviated Journal |
Изв. РАН Сер. Физ. |
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74 |
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1 |
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110-112 |
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2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
| Abstract |
Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием. |
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Duplicated as 1217 |
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RPLAB @ gujma @ |
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642 |
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Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
| Title |
Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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Journal Article |
| Year |
2010 |
Publication |
Физика и техника полупроводников |
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44 |
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11 |
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1475-1478 |
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2DEG, AlGaAs/GaAs heterostructures mixers |
| Abstract |
Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K. |
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Duplicated as 1216 |
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RPLAB @ gujma @ |
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702 |
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Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Goltsman, G. |
| Title |
Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform |
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Conference Article |
| Year |
2017 |
Publication |
Proc. SPBOPEN |
Abbreviated Journal |
Proc. SPBOPEN |
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449-450 |
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Bragg waveguides |
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We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. Transmission spectra of the integrated notch filter has been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. |
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St. Petersburg, Russia |
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Duplicated as 1141 |
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1257 |
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