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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R.
Title Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium Type Journal Article
Year 1986 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 64 Issue 4 Pages 889-897
Keywords Ge, trapping of free carriers
Abstract Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
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Call Number Serial 1707
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
Year 1972 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 16 Issue 4 Pages 161-162
Keywords Ge, energy spectrum, free excitons
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Call Number Serial 1736
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Author Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of submillimeter impurity and exciton photoconduction in Ge Type Journal Article
Year 1982 Publication Optics and Spectroscopy Abbreviated Journal Optics and Spectroscopy
Volume 52 Issue 4 Pages 454-455
Keywords Ge, exciton photoconduction
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Call Number Serial 1715
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 33 Issue 11 Pages 574
Keywords Ge, excitons, photoconductivity
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Call Number Serial 1718
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Population and lifetime of excited states of shallow impurities in Ge Type Journal Article
Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 49 Issue 2 Pages 355-362
Keywords Ge, photothermal ionization, shallow impurities
Abstract An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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Notes (up) Approved no
Call Number Serial 1719
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