|
Records |
Links |
|
Author |
Смирнов, Константин Владимирович; Чулкова, Галина Меркурьевна; Вахтомин, Юрий Борисович; Корнеев, Александр Александрович; Окунев, Олег Валерьевич; Дивочий, Александр Валерьевич; Семенов, Александр Владимирович; Гольцман, Григорий Наумович |
|
|
Title |
Особенности разогрева и релаксации горячих электронов О-754 в тонкопленочных cверхпроводниковых наноструктурах и 2D полупроводниковых гетероструктурах при поглощении излучения инфракрасного и терагерцового диапазонов |
Type |
Book Whole |
|
Year |
2014 |
Publication |
|
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
|
Pages |
|
|
|
Keywords |
2DEG |
|
|
Abstract |
В монографии рассмотрены основные особенности эффекта электронного разогрева в тонких сверхпроводниковых пленках и полупроводниковых гетеропереходах, возникающего при поглощении носителями заряда излучений терагерцового и инфракрасного диапазонов.
Значительная часть монографии посвящена представлению современных достижений при использовании указанного эффекта для создания приемных устройств с рекордными характеристиками: терагерцовых гетеродинных и болометрических приемников на основе сверхпроводниковых и полупроводниковых структур; сверхпроводниковых приемников одиночных ИК фотонов. В работе также подробно рассмотрены основы современной сверхпроводниковой тонкопленочной технологии.
Монография может быть полезна студентам старших курсов, аспирантам и начинающим исследователям, работающим в области физики твердого тела, оптики, радиофизики. |
|
|
Address |
Москва |
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
МПГУ |
Place of Publication |
|
Editor |
|
|
|
Language |
Russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
978-5-4263-0145-0 |
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
240 страниц |
Approved |
no |
|
|
Call Number |
|
Serial |
1814 |
|
Permanent link to this record |
|
|
|
|
Author |
Kawano, Yukio; Ishibashi, Koji |
|
|
Title |
An on-chip near-field terahertz probe and detector |
Type |
Journal Article |
|
Year |
2008 |
Publication |
Nature Photonics |
Abbreviated Journal |
Nature Photon |
|
|
Volume |
2 |
Issue |
10 |
Pages |
618-621 |
|
|
Keywords |
single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications |
|
|
Abstract |
The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1749-4885 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
570 |
|
Permanent link to this record |
|
|
|
|
Author |
An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. |
|
|
Title |
Infrared phototransistor using capacitively coupled two-dimensional electron gas layers |
Type |
Journal Article |
|
Year |
2005 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
|
|
Volume |
86 |
Issue |
|
Pages |
172106 - 172106-3 |
|
|
Keywords |
2DEG |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
RPLAB @ akorneev @ |
Serial |
603 |
|
Permanent link to this record |
|
|
|
|
Author |
Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. |
|
|
Title |
Energy-loss rates for hot electrons and holes in GaAs quantum wells |
Type |
Journal Article |
|
Year |
1985 |
Publication |
Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
|
|
Volume |
54 |
Issue |
|
Pages |
2045-2048 |
|
|
Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
|
|
Abstract |
We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
633 |
|
Permanent link to this record |
|
|
|
|
Author |
Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. |
|
|
Title |
Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes |
Type |
Journal Article |
|
Year |
1985 |
Publication |
Phys. B+C |
Abbreviated Journal |
|
|
|
Volume |
134 |
Issue |
1-3 |
Pages |
174-178 |
|
|
Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
|
|
Abstract |
The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
634 |
|
Permanent link to this record |