Bibliography database of Radiophysics Laboratory (RpLab) -- Query Results

	Bibliography database of Radiophysics Laboratory (RpLab) Home \| Show All \| Simple Search \| Advanced Search	Login Quick Search: Field: contains: ...
	21-30 of 52 records found matching your query:

Search & Display Options

Select All Deselect All

<< 1 2 3 4 5 6 >>

List View

Citations

Details

	Records
	Author	Симонов, Н. О.; Флоря, И. Н.; Корнеева, Ю. П.; Корнеев, А. А.; Гольцман, Г. Н.
	Title	Однофотонный отклик в тонких сверхпроводящих MoN_x пленках			Type	Conference Article
	Year	2018	Publication	Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт.	Abbreviated Journal	Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт.
	Volume		Issue		Pages	408-409
	Keywords	SSPD, SNSPD
	Abstract	Продемонстрирован однофотонный отклик, при токе близком к критическому, в MoNx сверхпроводящих полосках шириной 70-104 нм. MoNx детекторы, имеющие коэффициент диффузии D≈0.32 см2/с и время электрон-фононного взаимодействия ηe-ph≈300 пс, достигают квантовой эффективности QE≈20% на длине волны λ=1550 нм. Возможность реализации однофотонного детектора в данном материале, подтверждает существующую теорию вихревого механизма возникновения фотоотклика в узких сверхпроводящих полосках.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-2445-9	Medium
	Area		Expedition		Conference
	Notes	УДК 535(06)+004(06)			Approved	no
	Call Number				Serial	1251
Permanent link to this record



	Author	Золотов, Ф. И.; Дивочий, А. В.; Вахтомин, Ю. Б.; Пентин, И. В.; Морозов, П. В.; Селезнев, В. А.; Смирнов, К. В.
	Title	Применение тонких сверхпроводниковых пленок нитрида ванадия для изготовления счетчиков одиночных ИК-фотонов			Type	Conference Article
	Year	2018	Publication	Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт.	Abbreviated Journal	Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт.
	Volume		Issue		Pages	60-61
	Keywords	VN SSPD, SNSPD
	Abstract	Получены первые результаты по применению сверхпроводниковых пленок нитрида ванадия (VN) для детекторов одиночных фотонов ИК-диапазона. Изучение сверхпроводниковых однофотонных детекторов (SSPD), изготовленных на основе ультратонких (~5 нм) пленок VN, показало возможность создания устройств с близкой к насыщению зависимостью квантовой эффективности от тока смещения детекторов в телекоммуникационном диапазоне длин волн. Также нами были исследованы кинетическая индуктивность изготовленных структур с различной длиной сверхпроводниковой полоски и времена релаксации электронов в тонких сверхпроводниковых пленках VN.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-2445-9	Medium
	Area		Expedition		Conference
	Notes	УДК 535(06)+004(06)			Approved	no
	Call Number				Serial	1252
Permanent link to this record



	Author	Nikoghosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V.
	Title	Effect of absorption on the efficiency of THz radiation generation in a nonlinear crystal placed into a waveguide			Type	Journal Article
	Year	2018	Publication	Armenian J. Phys.	Abbreviated Journal	Armenian J. Phys.
	Volume	11	Issue	4	Pages	257-262
	Keywords	THz, waveguide, nonlinear crystal
	Abstract	The effect of THz radiation absorption on the efficiency of generation of coherent THz radiation in a nonlinear optical crystal placed into a metal rectangular waveguide is studied. The efficiency of the nonlinear conversion of optical laser radiation to the THz band is also a function of the phase-matching (PM) condition inside the nonlinear crystal. The method of partial filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. Phase matching was obtained by the proper choice of the thickness of the nonlinear crystal, namely the degree of partial filling of the waveguide. We have studied the THz radiation attenuation caused by the losses in both the metal walls of the waveguide and in the crystal, taking into account the dimension of the cross section of the waveguide, the degree of partial filling and its dielectric constant.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1829-1171	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1291
Permanent link to this record



	Author	Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D.
	Title	Graphene-layer and graphene-nanoribbon FETs as THz detectors			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051054
	Keywords	field-effect transistor, FET, monolayer graphene, graphene nanoribbons
	Abstract	We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1300
Permanent link to this record



	Author	Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F.
	Title	Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051050 (1 to 5)
	Keywords	field-effect transistor, FET, carbon nanotube, CNT
	Abstract	In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1301
Permanent link to this record



	Author	Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
	Title	Towards to the development of THz detectors based on carbon nanostructures			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1092	Issue		Pages	012039 (1 to 4)
	Keywords	CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors
	Abstract	Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1302
Permanent link to this record



	Author	Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M.
	Title	Optical single-photon detection in micrometer-scale NbN bridges			Type	Journal Article
	Year	2018	Publication	Phys. Rev. Applied	Abbreviated Journal	Phys. Rev. Applied
	Volume	9	Issue	6	Pages	064037 (1 to 13)
	Keywords	NbN SSPD, SNSPD
	Abstract	We demonstrate experimentally that single-photon detection can be achieved in micrometer-wide NbN bridges, with widths ranging from 0.53 to 5.15 μm and for photon wavelengths of 408 to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50% of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors, based on nanometer-scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modeling based on the theory of nonequilibrium superconductivity, including the vortex-assisted mechanism of initial dissipation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2331-7019	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1303
Permanent link to this record



	Author	Korneev, A.; Korneeva, Y.; Florya, I.; Semenov, A.; Goltsman, G.
	Title	Photon switching statistics in multistrip superconducting single-photon detectors			Type	Journal Article
	Year	2018	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	28	Issue	7	Pages	1-4
	Keywords	SSPD, SNSPD
	Abstract	We study photon count statistics in superconducting single-photon detectors consisting of up to 70 narrow superconducting strips connected in parallel. Using interarrival time analysis, we demonstrate that our samples are operated in the “arm-trigger” regime and require up to seven subsequently absorbed photons to form a resistive state in the whole sample. We also performed numerical simulation of the light and dark count rates versus detector bias current, which are in good agreement with the experimental results.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1304
Permanent link to this record



	Author	Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Chulkova, G. M.; Goltsman, G. N.
	Title	Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films			Type	Journal Article
	Year	2018	Publication	Phys. Rev. B	Abbreviated Journal	Phys. Rev. B
	Volume	97	Issue	18	Pages	184512 (1 to 13)
	Keywords	WSi films, diffusion constant, SSPD, SNSPD
	Abstract	We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2469-9950	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1305
Permanent link to this record



	Author	Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
	Title	Graphene-based lateral Schottky diodes for detecting terahertz radiation			Type	Conference Article
	Year	2018	Publication	Proc. Optical Sensing and Detection V	Abbreviated Journal	Proc. Optical Sensing and Detection V
	Volume	10680	Issue		Pages	30-39
	Keywords	graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves
	Abstract	Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
	Address
	Corporate Author				Thesis
	Publisher	Spie	Place of Publication		Editor	Berghmans, F.; Mignani, A.G.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	10.1117/12.2307020			Serial	1306
Permanent link to this record