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Author Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. openurl 
  Title Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs Type Journal Article
  Year 2010 Publication Изв. РАН Сер. Физ. Abbreviated Journal Изв. РАН Сер. Физ.  
  Volume 74 Issue 1 Pages 110-112  
  Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth  
  Abstract Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием.  
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  Language Russian Summary Language Original Title (up)  
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  Notes Duplicated as 1217 Approved no  
  Call Number RPLAB @ gujma @ Serial 642  
Permanent link to this record
 

 
Author Zhizhon, Yan; Majedi, Hamed A. openurl 
  Title Optoelectronic mixing in the NbN superconducting nanowire single photon detectors Type Conference Article
  Year 2009 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 3786 Issue Pages 9  
  Keywords Optoelectronic devices, microwave superconductivity, nonlinearity, single photon detector, superconductivity, nanowire, optical mixing, microwave mixers, amplitude modulation, intensity modulation.  
  Abstract In this paper, we present our experimental results on the electrically pumped optoelectronic mixing effect exhibited in a niobium nitride (NbN) superconducting nanowire. The experimental setup in order to test the mixer has been reported in detail. This superconductive nanowire optoelectronic mixer demonstrates photodetection and mixing in an integrated manner. We have explored both effects under a great variety of external conditions, such as temperature and bias current, in order to seek potential ways toward quantum optoelectronic detection and mixing by such nanowire device.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 651  
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Author Doi, Y.; Wang, Z.; Ueda, T.; Nickels, P.; Komiyama, S.; Patrashin, M.; Hosako, I.; Matsuura, S.; Shirahata, M.; Sawayama, Y.; Kawada, M. openurl 
  Title CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument Type Journal Article
  Year 2009 Publication SPICA Abbreviated Journal SPICA  
  Volume Issue SPICA Workshop 2009 Pages  
  Keywords detectors; Infrared  
  Abstract We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 672  
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Author Dauler, Eric; Kerman, Andrew; Robinson, Bryan; Yang, Joel; Voronov, Boris; Goltsman, Gregory; Hamilton, Scott; Berggren, Karl url  doi
openurl 
  Title Photon-number-resolution with sub-30-ps timing using multi-element superconducting nanowire single photon detectors Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.  
  Volume 56 Issue 2 Pages 364-373  
  Keywords PNR SSPD; SNSPD; photon-number-resolution; superconducting nanowire single photon detector; timing jitter; system detection efficiency  
  Abstract A photon-number-resolving detector based on a four-element superconducting nanowire single photon detector is demonstrated to have sub-30-ps resolution in measuring the arrival time of individual photons. This detector can be used to characterize the photon statistics of non-pulsed light sources and to mitigate dead-time effects in high-speed photon counting applications. Furthermore, a 25% system detection efficiency at 1550 nm was demonstrated, making the detector useful for both low-flux source characterization and high-speed photon-counting and quantum communication applications. The design, fabrication and testing of this detector are described, and a comparison between the measured and theoretical performance is presented.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 700  
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Author Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. url  doi
openurl 
  Title Superconducting parallel nanowire detector with photon number resolving functionality Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.  
  Volume 56 Issue 2-3 Pages 334-344  
  Keywords PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN  
  Abstract We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.  
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  Series Volume Series Issue Edition  
  ISSN 0950-0340 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 701  
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