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Tretyakov, I. V.; Finkel, M. I.; Ryabchun, S. A.; Kardakova, A. I.; Seliverstov, S. V.; Petrenko, D. V.; Goltsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Hot-electron bolometer mixers with in situ contacts |
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Journal Article |
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Year |
2014 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
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56 |
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8-9 |
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591-598 |
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HEB mixers |
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We report on the latest achievements in the development of superconducting hot-electron bolometer (HEB) mixers for terahertz superheterodyne receivers. We consider application ranges of such receivers and requirements for the basic characteristics of the mixers. Main features of the mixers, such as noise temperature, gain bandwidth, noise bandwidth, and required local-oscillator power, have been improved significantly over the past few years due to intense research work, both in terms of the element fabrication quality and in terms of understanding of the physics of the processes occurring in the HEB mixers. Contacts between the superconducting bridge and the planar antenna play a key role in the mixer operation. Improvement of the quality of the contacts leads simultaneously to a decrease in the noise temperature and an increase in the gain bandwidth of a mixer. |
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0033-8443 |
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1170 |
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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
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Journal Article |
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Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
103 |
Issue |
18 |
Pages |
181121 (1 to 5) |
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carbon nanotubes, CNT, THz radiation, SiO2 substrate |
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We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. |
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0003-6951 |
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1171 |
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Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Investigating the detection regimes of a superconducting single-photon detector |
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Journal Article |
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2013 |
Publication |
J. Opt. Technol. |
Abbreviated Journal |
J. Opt. Technol. |
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80 |
Issue |
7 |
Pages |
435 |
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Keywords |
SSPD, quantum efficiency |
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The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes. |
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1070-9762 |
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no |
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1172 |
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Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit |
Type |
Conference Article |
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Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1695 |
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Pages |
012135 |
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silicon nitride O-ring resonator, ORR |
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In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide. |
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1742-6588 |
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1177 |
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Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation |
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Conference Article |
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Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1695 |
Issue |
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Pages |
012118 |
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Mach-Zehnder interferometer, MZI |
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In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed. |
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1742-6588 |
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1178 |
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Venediktov, I. O.; Elezov, M. S.; Prokhodtsov, A. I.; Kovalyuk, V. V.; An, P. P.; Golikov, A. D.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Study of microheater’s phase modulation for on-chip Kennedy receiver |
Type |
Conference Article |
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Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1695 |
Issue |
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012117 |
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Keywords |
Mach-Zehnder interferometers, MZI |
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In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters. |
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1742-6588 |
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no |
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1179 |
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Elmanov, I.; Sardi, F.; Xia, K.; Kornher, T.; Kovalyuk, V.; Prokhodtsov, A.; An, P.; Kuzin, A.; Elmanova, A.; Goltsman, G.; Kolesov, R. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Development of focusing grating couplers for lithium niobate on insulator platform |
Type |
Conference Article |
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Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1695 |
Issue |
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Pages |
012127 |
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grating couplers, lithium niobat |
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In this paper, we fabricate and experimentally study focusing grating couplers for lithium niobate on an insulator photonic platform. The transmittance of a waveguide equipped with in- and out-couplers with respect to the grating period is measured with and without silicon dioxide cladding applied. Our results show the influence of silicon dioxide cladding on the efficiency and the central wavelength of grating couplers and can be used to improve grating coupling efficiency. Our study is supported by numerical simulations. |
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1742-6588 |
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1180 |
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Zvagelsky, R. D.; Chubich, D. A.; Kolymagin, D. A.; Korostylev, E. V.; Kovalyuk, V. V.; Prokhodtsov, A. I.; Tarasov, A. V.; Goltsman, G. N.; Vitukhnovsky, A. G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Three-dimensional polymer wire bonds on a chip: morphology and functionality |
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Journal Article |
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2020 |
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J. Phys. D: Appl. Phys. |
Abbreviated Journal |
J. Phys. D: Appl. Phys. |
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Volume |
53 |
Issue |
35 |
Pages |
355102 |
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photonic wire bonds, PWB |
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Modern microchip-scale transceivers are capable of transmitting data at rates of the order of several terabits per second. In this regard, there is an urgent need to improve the interfaces connecting the chips and extend the bandpass of the interconnections. We use an approach combining silicon nitride nanophotonic circuits with 3D polymer waveguides fabricated by direct laser writing, which can be used as photonic interconnections or photonic wire bonds (PWB). These structures are designed, simulated, fabricated, and optimized for better light transmission at the telecommunication wavelength. An important part of this work is the study of the telecom signal transmission in a 3D polymer waveguide connecting two silicon nitride facing tapers. Two cases are considered: the tapers are one opposite the other or misaligned. Initially, the PWB shape was chosen to be Gaussian and then optimized: the top was circle-shaped and with the lower part still being Gaussian. Transmission losses were measured for both types of waveguides with different shapes. The idea of an optical multi-level crossing for photonic integrated circuits is also suggested as a solution to the problem of interconnections within a single chip. |
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0022-3727 |
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1181 |
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Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
CMOS compatible nanoantenna-nanodiamond integration |
Type |
Conference Article |
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Year |
2019 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1410 |
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Pages |
012180 |
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bull-eye antenna, hyperbolic metamaterials, NV-centers |
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Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds. |
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1742-6588 |
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no |
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1182 |
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Zubkova, E.; Golikov, A.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide |
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Conference Article |
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2019 |
Publication |
J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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Volume |
1410 |
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012179 |
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coarse wavelength-division multiplexing, Si3N4 rib waveguide |
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We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm. |
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1742-6588 |
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1183 |
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Kuzin, A.; Kovalyuk, V.; Golikov, A.; Prokhodtsov, A.; Marakhin, A.; Ferrari, S.; Pernice, W.; Gippius, N.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Efficiency of focusing grating couplers versus taper length and angle |
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Conference Article |
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2019 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1410 |
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012181 |
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focusing grating coupler |
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Here we experimentally studied dependence of a focusing grating coupler efficiency versus taper length and angle on silicon nitride platform. As a result, we obtained a dependence for the efficiency of a focusing grating coupler on the parameters of the taper length and angle. |
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1184 |
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Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Studying key principles for design and fabrication of silicon photonic-based beamforming networks |
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Conference Article |
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2019 |
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PIERS-Spring |
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PIERS-Spring |
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745-751 |
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silicon photonics, TriPleX platform |
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In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array. |
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9017646 |
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1186 |
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Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency |
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Conference Article |
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2019 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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220 |
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02009 |
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grating coupler, SiO2 |
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The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform. |
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2100-014X |
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1188 |
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Author |
Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
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Conference Article |
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Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
220 |
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Pages |
03012 |
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Keywords |
e-beam lithography, Si3N4 |
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In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform. |
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2100-014X |
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1189 |
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Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Integration of nanodiamonds with NV-centers on optical silicon nitride structures |
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Conference Article |
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Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
220 |
Issue |
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Pages |
03013 |
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Keywords |
nanodiamonds, NV-centers, Si3N4 |
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In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources. |
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1190 |
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