|
|
Hajenius, M., Baselmans, J. J. A., Gao, J. R., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2004). Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz. Supercond. Sci. Technol., 17(5), S224–S228.
Abstract: NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance.
|
|
|
|
Gol'tsman, G. N., Vachtomin, Y. B., Antipov, S. V., Finkel, M. I., Maslennikov, S. N., Smirnov, K. V., et al. (2005). NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers. In Proc. SPIE (Vol. 5727, pp. 95–106).
Abstract: We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter.
|
|
|
|
Sobolewski, R., Xu, Y., Zheng, X., Williams, C., Zhang, J., Verevkin, A., et al. (2002). Spectral sensitivity of the NbN single-photon superconducting detector. IEICE Trans. Electron., E85-C(3), 797–802.
Abstract: We report our studies on the spectral sensitivity of superconducting NbN thin-film single-photon detectors (SPD's) capable of GHz counting rates of visible and near-infrared photons. In particular, it has been shown that a NbN SPD is sensitive to 1.55-µm wavelength radiation and can be used for quantum communication. Our SPD's exhibit experimentally measured intrinsic quantum efficiencies from 20% at 800 nm up to 1% at 1.55-µm wavelength. The devices demonstrate picosecond response time (<100 ps, limited by our readout system) and negligibly low dark counts. Spectral dependencies of photon counting of continuous-wave, 0.4-µm to 3.5-µm radiation, and 0.63-µm, 1.33-µm, and 1.55-µm laser-pulsed radiations are presented for the single-stripe-type and meander-type devices.
|
|
|
|
Корнеев, А. А., Минаева, О., Рубцова, И., Милостная, И., Чулкова, Г., Воронов, Б., et al. (2005). Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN. Квантовая электроника, 35(8), 698–700.
Abstract: Представлены результаты исследований сверхпроводящих однофотонных детекторов, изготовленных из ультратонкой пленки NbN. Развитие технологического процесса изготовления детекторов, а также снижение рабочей температуры до 2 К позволили существенно увеличить квантовую эффективность: для видимого света (λ = 0.56 мкм) она составила 30%–40%, т.е. достигла предела, определяемого коэффициентом поглощения пленки. С ростом длины волны квантовая эффективность экспоненциально падает, составляя ~20% на λ=1.55 мкм и ~0.02% на λ = 5 мкм. При скорости темнового счета ~10-4s-1 экспериментально измеренная эквивалентная мощность шума составила 1.5 × 10-20 Вт/Гц-1/2; в дальнейшем она может быть уменьшена до рекордно низкого значения 5 × 10-21 Вт/Гц-1/2. Временное разрешение детектора равно 30 пс.
|
|
|
|
Korneev, A., Minaeva, O., Rubtsova, I., Milostnaya, I., Chulkova, G., Voronov, B., et al. (2005). Superconducting single-photon ultrathin NbN film detector. Quantum Electronics, 35(8), 698–700.
Abstract: Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps.
|
|
|
|
Gol'tsman, G. N., Semenov, A. D., Gousev, Y. P., Zorin, M. A., Gogidze, I. G., Gershenzon, E. M., et al. (1991). Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light. Supercond. Sci. Technol., 4(9), 453–456.
Abstract: The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature.
|
|
|
|
Prober, D. E. (1993). Superconducting terahertz mixer using a transition-edge microbolometer. Appl. Phys. Lett., 62(17), 2119–2121.
|
|
|
|
Gousev, Y. P., Gol'tsman, G. N., Semenov, A. D., Gershenzon, E. M., Nebosis, R. S., Heusinger, M. A., et al. (1994). Broadband ultrafast superconducting NbN detector for electromagnetic radiation. J. Appl. Phys., 75(7), 3695–3697.
Abstract: An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect.
|
|
|
|
Gol'tsman, G. N., Karasik, B. S., Okunev, O. V., Dzardanov, A. L., Gershenzon, E. M., Ekstrom, H., et al. (1995). NbN hot electron superconducting mixers for 100 GHz operation. IEEE Trans. Appl. Supercond., 5(2), 3065–3068.
Abstract: NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K.
|
|
|
|
Semenov, A., Richter, H., Smirnov, K., Voronov, B., Gol'tsman, G., & Hübers, H. - W. (2004). The development of terahertz superconducting hot-electron bolometric mixers. Supercond. Sci. Technol., 17(5), 436–439.
Abstract: We present recent advances in the development of NbN hot-electron bolometric (HEB) mixers for flying terahertz heterodyne receivers. Three important issues have been addressed: the quality of the source NbN films, the effect of the bolometer size on the spectral properties of different planar feed antennas, and the local oscillator (LO) power required for optimal operation of the mixer. Studies of the NbN films with an atomic force microscope indicated a surface structure that may affect the performance of the smallest mixers. Measured spectral gain and noise temperature suggest that at frequencies above 2.5 THz the spiral feed provides better overall performance than the double-slot feed. Direct measurements of the optimal LO power support earlier estimates made in the framework of the uniform mixer model.
|
|
|
|
Cherednichenko, S., Yagoubov, P., Il'In, K., Gol'tsman, G., & Gershenzon, E. (1997). Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 245–257).
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
|
|
|
|
Kawamura, J., Blundell, R., Tong, C. - Y. E., Gol'tsman, G., Gershenzon, E., Voronov, B., et al. (1997). Phonon-cooled NbN HEB mixers for submillimeter wavelengths. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 23–28).
Abstract: The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.
|
|
|
|
Ekstörm, H., Kollberg, E., Yagoubov, P., Gol'tsman, G., Gershenzon, E., & Yngvesson, S. (1997). Gain and noise bandwidth of NbN hot-electron bolometric mixers. Appl. Phys. Lett., 70(24), 3296–3298.
Abstract: We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
|
|
|
|
Sobolewski, R., Verevkin, A., Gol'tsman, G. N., Lipatov, A., & Wilsher, K. (2003). Ultrafast superconducting single-photon optical detectors and their applications. IEEE Trans. Appl. Supercond., 13(2), 1151–1157.
Abstract: We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.
|
|
|
|
Merkel, H. F., Yagoubov, P. A., Kroug, M., Khosropanah, P., Kollberg, E. L., Gol’tsman, G. N., et al. (1998). Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies. In Proc. 28th European Microwave Conf. (Vol. 1, pp. 294–299).
Abstract: In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point.
|
|
