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Elmanova, A., Elmanov, I., Komrakova, S., Golikov, A., Javadzade, J., Vorobyev, V., et al. (2019). Integration of nanodiamonds with NV-centers on optical silicon nitride structures. In EPJ Web Conf. (Vol. 220, 03013).
Abstract: In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.
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An, P., Kovalyuk, V., Golikov, A., Zubkova, E., Ferrari, S., Korneev, A., et al. (2018). Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing. In J. Phys.: Conf. Ser. (Vol. 1124, 051047).
Abstract: In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3
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Elezov, M. S., Scherbatenko, M. L., Sych, D. V., & Goltsman, G. N. (2018). Active and passive phase stabilization for the all-fiber Michelson interferometer. In J. Phys.: Conf. Ser. (Vol. 1124, 051014 (1 to 5)).
Abstract: We put forward two methods for phase stabilization in the all-fiber Michelson interferometer. To perform passive phase stabilization, we use a heat bath for all fibers and electro-optical components, and put the interferometer in a hermetic case. To perform active phase stabilization, we monitor output power of the interferometer and develop an electronic feedback control. The phase stabilization methods enable stable interference pattern for several minutes, and can be helpful for the development of the optimal quantum receiver for coherent signals.
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Golikov, A., Kovalyuk, V., An, P., Zubkova, E., Ferrari, S., Pernice, W., et al. (2018). Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing. In J. Phys.: Conf. Ser. (Vol. 1124, 051051).
Abstract: Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2×105) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip.
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Smirnov, E., Golikov, A., Zolotov, P., Kovalyuk, V., Lobino, M., Voronov, B., et al. (2018). Superconducting nanowire single-photon detector on lithium niobate. In J. Phys.: Conf. Ser. (Vol. 1124, 051025).
Abstract: We demonstrate superconducting niobium nitride nanowires folded on top of lithium niobate substrate. We report of 6% system detection efficiency at 20 s−1 dark count rate at telecommunication wavelength (1550 nm). Our results shown great potential for the use of NbN nanowires in the field of linear and nonlinear integrated quantum photonics.
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Zubkova, E., An, P., Kovalyuk, V., Korneev, A., Ferrari, S., Pernice, W., et al. (2018). Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide. In J. Phys.: Conf. Ser. (Vol. 1124, 051048).
Abstract: We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si3N4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm.
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Prokhodtsov, A., An, P., Kovalyuk, V., Zubkova, E., Golikov, A., Korneev, A., et al. (2018). Optimization of on-chip photonic delay lines for telecom wavelengths. In J. Phys.: Conf. Ser. (Vol. 1124, 051052).
Abstract: In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm.
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Kovalyuk, V., Kahl, O., Ferrari, S., Vetter, A., Lewes-Malandrakis, G., Nebel, C., et al. (2018). On-chip single-photon spectrometer for visible and infrared wavelength range. In J. Phys.: Conf. Ser. (Vol. 1124, 051045).
Abstract: Here we show our latest progress in the field of a single-photon spectrometer for the visible and infrared wavelengths ranges implementation. We consider three different on-chip approaches: a coherent spectrometer with a low power of the heterodyne, a coherent spectrometer with a high power of the heterodyne, and an eight-channel single-photon spectrometer for direct detection. Along with high efficiency, spectrometers show high detection efficiency and temporal resolution through the use of waveguide integrated superconducting nanowire single-photon detectors.
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Korneev, A., Kovalyuk, V., An, P., Golikov, A., Zubkova, E., Ferrari, S., et al. (2018). Superconducting single-photon detector for integrated waveguide spectrometer. In EPJ Web Conf. (Vol. 190, 04009).
Abstract: We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector.
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Krause, S., Mityashkin, V., Antipov, S., Gol'tsman, G., Meledin, D., Desmaris, V., et al. (2016). Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method. In Proc. 27th Int. Symp. Space Terahertz Technol. (pp. 30–32).
Abstract: In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination.
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