Verevkin, A., Williams, C., Gol’tsman, G. N., Sobolewski, R., & Gilbert, G. (2001). Single-photon superconducting detectors for practical high-speed quantum cryptography. Optical Society of America.
Abstract: We have developed an ultrafast superconducting single-photon detector with negligible dark counting rate. The detector is based on an ultrathin, submicron-wide NbN meander-type stripe and can detect individual photons in the visible to near-infrared wavelength range at a rate of at least 10 Gb/s. The above counting rate allows us to implement the NbN device to unconditionally secret quantum key distRochester, New Yorkribution in a practical, high-speed system using real-time Vernam enciphering.
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Boreman, G. D. (2001). A Users guide to IR detectors. In Proc. SPIE (Vol. 4420, pp. 79–90).
Abstract: This paper will guide the first-time user toward proper selection and use of IR detectors for applications in industrial inspection, process control, and laser measurements.
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Codreanu, I., & Boreman, G. D. (2001). Infrared microstrip dipole antennas. Microw Opt Technol Lett, 29(6), 381–383.
Abstract: Abstract 10.1002/mop.1184.abs We report on the successful use of niobium microbolometers coupled to microstrip dipole antennas for the detection of midinfrared radiation. Measurements of the detector response versus antenna length performed at the 10.6 μm wavelength allowed us to identify the first three current-wave resonances along the antenna arms. The detector response was also measured as a function of the radiation wavelength in the 911 μm spectral domain. Excellent agreement between the experimental results and finite-difference time-domain (FDTD) predictions was obtained.
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Puscasu, I., & Boreman, G. D. (2001). Theoretical and experimental analysis of transmission and enchanced absorption of frequency selective surfaces in the infrared. In Proc. SPIE (Vol. 4293, pp. 185–190).
Abstract: A comparative study between theory and experiment is presented for transmission through lossy frequency selective surfaces (FSSs) on silicon in the 2 – 15 micrometer range. Important parameters controlling the resonance shape and location are identified: dipole length, spacing, impedance, and dielectric surroundings. Their separate influence is exhibited. The primary resonance mechanism of FSSs is the resonance of the individual metallic patches. There is no discernable resonance arising from a feed-coupled configuration. The real part of the element's impedance controls the minimum value of transmission, while scarcely affecting its location. Varying the imaginary part shifts the location of resonance, while only slightly changing the minimum value of transmission. With such fine-tuning, it is possible to make a good fit between theory and experiment near the dipole resonance on any sample. A fixed choice of impedance can provide a reasonable fit to all samples fabricated under the same conditions. The dielectric surroundings change the resonance wavelength of the FSS compared to its value in air. The presence of FSS on the substrate increases the absorptivity/emissivity of the surface in a resonant way. Such enhancement is shown for dipole and cross arrays at several wavelengths.
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(2001). ГОСТ 2.102-68. ЕСКД. Виды и комплектность конструкторских документов.
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(2001). ГОСТ 19.301-2000. ЕСКД. Программа и методика испытаний. Требования к содержанию, оформлению и контролю качества.
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(2001). ГОСТ Р 15.201-2000. Продукция производственно-технического назначения. Порядок разработки и постановки продукции на производство.
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Gol’tsman, G., Okunev, O., Chulkova, G., Lipatov, A., Dzardanov, A., Smirnov, K., et al. (2001). Fabrication and properties of an ultrafast NbN hot-electron single-photon detector. IEEE Trans. Appl. Supercond., 11(1), 574–577.
Abstract: A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB.
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Skalare, A., McGrath, W. R., Echternach, P. M., Leduc, H. G., Siddiqi, I., Verevkin, A., et al. (2001). Aluminum hot-electron bolometer mixers at submillimeter wavelengths. IEEE Trans. Appl. Supercond., 11(1), 641–644.
Abstract: Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies.
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Verevkin, A., Xu, Y., Zheng, X., Williams, C., Sobolewski, R., Okunev, O., et al. (2001). Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 462–468).
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Gol'tsman, G., Semenov, A., Smirnov, K., & Voronov, B. (2001). Background limited quantum superconducting detector for submillimeter wavelengths. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 469–475).
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Gol’tsman, G. N., & Smirnov, K. V. (2001). Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures. Jetp Lett., 74(9), 474–479.
Abstract: Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.
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Somani, S., Kasapi, S., Wilsher, K., Lo, W., Sobolewski, R., & Gol’tsman, G. (2001). New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect. J. Vac. Sci. Technol. B, 19(6), 2766–2769.
Abstract: A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics.
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Gol’tsman, G. N., Okunev, O., Chulkova, G., Lipatov, A., Semenov, A., Smirnov, K., et al. (2001). Picosecond superconducting single-photon optical detector. Appl. Phys. Lett., 79(6), 705–707.
Abstract: We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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Xu, Y., Zheng, X., Williams, C., Verevkin, A., Sobolewski, R., Chulkova, G., et al. (2001). Ultrafast superconducting hot-electron single-photon detector. In CLEO (345).
Abstract: Summary form only given. The current most-pressing need is to develop a practical, GHz-range counting single-photon detector, operational at either 1.3-/spl mu/m or 1.55-/spl mu/m radiation wavelength, for novel quantum communication and quantum cryptography systems. The presented solution of the problem is to use an ultrafast hot-electron photodetector, based on superconducting thin-film microstructures. This type of device is very promising, due to the macroscopic quantum nature of superconductors. Very fast response time and the small, (meV range) value of the superconducting energy gap characterize the superconductor, leading to the efficient avalanche process even for infrared photons.
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