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Hübers, H. - W., Semenov, A., Richter, H., Birk, M., Krocka, M., Mair, U., et al. (2002). Terahertz heterodyne receiver with a hot-electron bolometer mixer. In J. Wold, & J. Davidson (Eds.), Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop.
Abstract: During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA)[1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR.
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Селиверстов, С. В., Финкель, М. И., Рябчун, С. А., Воронов, Б. М., Каурова, Н. С., Селезнев, В. А., et al. (2014). Терагерцевый сверхпроводниковый детектор с аттоджоулевым энергетическим разрешением и постоянной времени 25 пс. In Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» (Vol. 1, pp. 91–92).
Abstract: Представлены результаты измерения энергетического разрешения терагерцевого сверхпроводникового NbN-детектора на эффектеэлектронного разогрева, работающего при температуре около 10 К. Использование инновационной in situ технологии производства привело к существенному улучшению чувствительности детектора. Увеличение быстродействия детектора было достигнуто за счет реализации дополнительного диффузионного канала охла-ждения электронной подсистемы. Измеренное значение эквивалентной мощности шума на частоте 2.5 ТГц составило 2.0×10-13Вт•Гц-0.5, постоянной времени 25 пс. Соответствующее расчетное значение энергетического разрешения составило 2.5 аДж.
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Kroug, M., Yagoubov, P., Gol'tsman, G., & Kollberg, E. (1997). NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies. In Inst. Phys. Conf. Ser. (Vol. 1, pp. 405–408). Bristol.
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Vahtomin, Y. B., Finkel, M. I., Antipov, S. V., Voronov, B. M., Smirnov, K. V., Kaurova, N. S., et al. (2002). Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si. In Harvard university (Ed.), Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 259–270). Cambridge, MA, USA.
Abstract: We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
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Meledin, D., Tong, C. Y. - E., Blundell, R., Kaurova, N., Smirnov, K., Voronov, B., et al. (2002). The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz. In Harvard university (Ed.), Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 65–72). Cambridge, MA, USA.
Abstract: We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation.
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